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PHP79NQ08LTNXP/PHN/a10000avaiN-channel TrenchMOS logic level FET


PHP79NQ08LT ,N-channel TrenchMOS logic level FETApplications„ DC-to-DC convertors„ Motors, lamps and solenoids„ General purpose power switching„ Un ..
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PHP79NQ08LT
N-channel TrenchMOS logic level FET
PHP79NQ08LT
N-channel TrenchMOS logic level FET
Rev. 03 — 26 April 2010 Product data sheet Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits Low conduction losses due to low
on-state resistance Suitable for logic level gate drive
sources
1.3 Applications DC-to-DC convertors General purpose power switching Motors, lamps and solenoids Uninterruptible power supplies
1.4 Quick reference data Table 1. Quick reference data
VDS drain-source
voltage≥25 °C; Tj≤ 175°C --75 V drain current Tmb =25°C; VGS=10V --73 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 --157 W
Static characteristics
RDSon drain-source
on-state
resistance
VGS =10V; ID =25A; =25°C; see Figure 9;
see Figure 10 1416mΩ
Dynamic characteristics
QGD gate-drain charge VGS =5V; ID =25A;
VDS =60 V; Tj =25°C;
see Figure 11; see Figure 12
-14 - nC
NXP Semiconductors PHP79NQ08LT
N-channel TrenchMOS logic level FET Pinning information Ordering information Limiting values
Table 2. Pinning information G gate
SOT78 (TO-220AB) D drain source D mounting base; connected to
drain
Table 3. Ordering information
PHP79NQ08LT TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --75 V
VDGR drain-gate voltage Tj≤ 175 °C; Tj≥25 °C; RGS =20kΩ --75 V
VGS gate-source voltage -15 - 15 V drain current VGS =10V; Tmb=25°C --73 A
VGS =5V; Tmb= 100 °C; see Figure 1 --47 A
VGS =10V; Tmb= 100°C --51 A
VGS =5V; Tmb =25°C; see Figure 1;
see Figure 3
--67 A
IDM peak drain current tp≤10 µs; pulsed; Tmb =25°C;
see Figure 3 - 240 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - - 157 W
Tstg storage temperature -55 - 175 °C junction temperature -55 - 175 °C
Source-drain diode source current Tmb=25°C --67 A
NXP Semiconductors PHP79NQ08LT
N-channel TrenchMOS logic level FET
ISM peak source current tp≤10 µs; pulsed; Tmb=25°C - - 270 A
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =35A;
Vsup≤75 V; RGS =50 Ω; tp= 0.07 ms;
unclamped - 120 mJ
Table 4. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors PHP79NQ08LT
N-channel TrenchMOS logic level FET Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance
from junction to
mounting base
see Figure 4 --0.95 K/W
Rth(j-a) thermal resistance
from junction to
ambient
vertical in still air - 60 - K/W
NXP Semiconductors PHP79NQ08LT
N-channel TrenchMOS logic level FET Characteristics
Table 6. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj= -55°C 70 - - V =0.25mA; VGS =0V; Tj=25°C 75 --V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj= 175 °C;
see Figure 7; see Figure 8
0.5 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 7; see Figure 8
--2.3 V =1mA; VDS =VGS; Tj =25°C;
see Figure 7; see Figure 8
1.1 1.5 2 V
IDSS drain leakage current VDS =75V; VGS =0V; Tj=25°C - 0.02 1 µA
VDS =75V; VGS =0V; Tj= 175°C - - 500 µA
IGSS gate leakage current VGS =15V; VDS =0V; Tj=25°C - 2 100 nA
VGS =-15 V; VDS =0V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =4.5 V; ID =25A; Tj =25°C;
see Figure 9; see Figure 10 15.5 18 mΩ
VGS =5V; ID =25A; Tj= 175 °C;
see Figure 9; see Figure 10
--34 mΩ
VGS =10V; ID =25A; Tj =25°C;
see Figure 9; see Figure 10 1416mΩ
VGS =5V; ID =25A; Tj =25 °C;
see Figure 9; see Figure 10 15 16.4 mΩ
Dynamic characteristics
QG(tot) total gate charge ID =25A; VDS =60V; VGS =5V; =25°C; see Figure 11; see Figure 12
-30 - nC
QGS gate-source charge - 6 - nC
QGD gate-drain charge - 14 - nC
Ciss input capacitance VDS =25V; VGS=0 V; f=1 MHz; =25°C; see Figure 13 3026 - pF
Coss output capacitance - 301 - pF
Crss reverse transfer
capacitance 140 - pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =5V;
RG(ext) =10 Ω; Tj =25°C
-30 - ns rise time - 102 - ns
td(off) turn-off delay time - 101 - ns fall time - 57 - ns
Source-drain diode
VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C;
see Figure 14 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs;
VGS =-10 V; VDS =30 V; Tj =25°C
-90 - ns recovered charge - 110 - nC
NXP Semiconductors PHP79NQ08LT
N-channel TrenchMOS logic level FET
NXP Semiconductors PHP79NQ08LT
N-channel TrenchMOS logic level FET
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