Home ›  P › P22 > PHP45NQ11T,N-channel TrenchMOS standard level FET

PHP45NQ11T Fast Delivery,Good Price
Part Number:

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
PHP45NQ11T	NXP/PH	N/a	10000	avai	N-channel TrenchMOS standard level FET

PHP45NQ11T ,N-channel TrenchMOS standard level FETApplications„ DC-to-DC convertors„ Switched-mode power supplies1.4 Quick reference data Table 1. Qu ..
PHP47NQ10T ,N-channel enhancement mode field-effect transistorApplications■ DC to DC converters■ Switched mode power supplies.cc4. Pinning informationTable 1: Pi ..
PHP50N03LT ,N-channel TrenchMOS transistor Logic level FET
PHP50N06 ,PowerMOS transistor
PHP50N06LT ,TrenchMOS transistor Logic level FET
PHP54N06T ,N-channel enhancement mode field-effect transistor
PLS159AA ,Programmable logic sequencer 16 ?45 ?12
PLS159AA ,Programmable logic sequencer 16 ?45 ?12
PLS173A ,Programmable logic array 22 ?42 ?10
PLS173A ,Programmable logic array 22 ?42 ?10
PLSI1032-80LJ , High-Density Programmable Logic
PLSI1032-90LJ , High-Density Programmable Logic

---

PHP45NQ11T
N-channel TrenchMOS standard level FET
PHP45NQ11T
N-channel TrenchMOS standard level FET
Rev. 02 — 19 November 2009 Product data sheet Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits Low conduction losses due to low
on-state resistance Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications DC-to-DC convertors „ Switched-mode power supplies
1.4 Quick reference data Table 1. Quick reference
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 105 V drain current Tmb =25°C; VGS =10V;
see Figure 1 and 3
--47 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 - - 150 W
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =45A;
VDS =80V; Tj =25°C;
see Figure 11 23.2 - nC
Static characteristics
RDSon drain-source
on-state resistance
VGS =10V; ID =25A; =25°C;
see Figure 9 and 10 1925mΩ
NXP Semiconductors PHP45NQ11T
N-channel TrenchMOS standard level FET Pinning information Ordering information
Table 2. Pinning information gate
SOT78 (TO-220AB) drain source D mounting base; connected to
drain
Table 3. Ordering information
PHP45NQ11T TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
NXP Semiconductors PHP45NQ11T
N-channel TrenchMOS standard level FET Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 105 V
VDGR drain-gate voltage Tj≤ 175 °C; Tj≥25 °C; RGS =20kΩ -105 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 -33 A
VGS =10V; Tmb =25°C; see Figure 1 and 3 -47 A
IDM peak drain current tp≤10 µs; pulsed; Tmb =25°C; see Figure 3 -188 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -150 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C - 47 A
ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 188 A
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source avalanche
energy
VGS =10V; Tj(init) =25°C; ID =18A; Vsup≤ 100V;
RGS =50 Ω; tp= 120 µs; unclamped
-160 mJ
NXP Semiconductors PHP45NQ11T
N-channel TrenchMOS standard level FET Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from
junction to mounting
base
see Figure 4 --1 K/W
Rth(j-a) thermal resistance from
junction to ambient
vertical in still air - 60 - K/W
NXP Semiconductors PHP45NQ11T
N-channel TrenchMOS standard level FET CharacteristicsTable 6. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj =-55°C 95 - - V =250 µA; VGS =0V; Tj =25°C 105 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS = VGS; Tj= 175 °C;
see Figure 8 - V =1mA; VDS = VGS; Tj =-55 °C;
see Figure 8
--4.4 V =1mA; VDS = VGS; Tj =25°C;
see Figure 8
234 V
IDSS drain leakage current VDS =100 V; VGS =0V; Tj=25°C --10 µA
VDS =100 V; VGS =0V; Tj= 175°C - - 500 µA
IGSS gate leakage current VGS =10V; VDS =0V; Tj=25°C - 0.02 100 nA
VGS =-10 V; VDS =0V; Tj=25°C - 0.02 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj= 175 °C;
see Figure 9 and 10 51.3 68 mΩ
VGS =10V; ID =25A; Tj =25°C;
see Figure 9 and 10
-19 25 mΩ
Dynamic characteristics
QG(tot) total gate charge ID =45A; VDS =80V; VGS =10V; =25°C; see Figure 11
-60 - nC
QGS gate-source charge - 11.2 - nC
QGD gate-drain charge - 23.2 - nC
Ciss input capacitance VDS =25V; VGS=0 V; f=1 MHz; =25°C; see Figure 12 2930 - pF
Coss output capacitance - 245 - pF
Crss reverse transfer
capacitance 160 - pF
td(on) turn-on delay time VDS =50V; RL =1.8 Ω; VGS =10V;
RG(ext) =5.6 Ω; Tj =25°C
-11.5 - ns rise time - 40 - ns
td(off) turn-off delay time - 40 - ns fall time - 45 - ns
Source-drain diode
VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C;
see Figure 13 0.87 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs; VGS =0V;
VDS =30V; Tj =25°C
-82 - ns recovered charge - 117 - nC
NXP Semiconductors PHP45NQ11T
N-channel TrenchMOS standard level FET

TEL:86-533-2716050      FAX:86-533-2716790     ©2020 IC PHOENIX CO.,LIMITED