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PHP45NQ10T
N-channel TrenchMOS standard level FET
PHP45NQ10T
N-channel TrenchMOS standard level FET
Rev. 02 — 8 July 2010 Product data sheet Product profile
1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits Higher operating power due to low
thermal resistance Low conduction losses due to low
on-state resistance Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications DC-to-DC convertors Switched-mode power supplies
1.4 Quick reference data Table 1. Quick reference dataVDS drain-source
voltage≥25 °C; Tj≤ 175°C - - 100 V drain current Tmb =25°C; VGS=10V --47 A
Ptot total power
dissipation
Tmb=25°C --150 W
Static characteristicsRDSon drain-source
on-state
resistance
VGS =10V; ID =25A; =25°C 2225mΩ
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =45A;
VDS =80 V; Tj =25°C
-25 -nC
NXP Semiconductors PHP45NQ10T
N-channel TrenchMOS standard level FET Pinning information Ordering information
Table 2. Pinning information
Table 3. Ordering informationPHP45NQ10T TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
NXP Semiconductors PHP45NQ10T
N-channel TrenchMOS standard level FET Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 100 V
VDGR drain-gate voltage Tj≤ 175 °C; Tj≥25 °C; RGS =20kΩ - 100 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb =100°C - 33 A
VGS =10V; Tmb =25°C - 47 A
IDM peak drain current pulsed; Tmb=25°C - 188 A
Ptot total power dissipation Tmb=25°C - 150 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C - 47 A
ISM peak source current pulsed; Tmb=25°C - 188 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =40A;
Vsup≤25 V; unclamped; tp= 100 µs;
RGS =50Ω 260 mJ
IAS non-repetitive avalanche
current
Vsup≤25 V; VGS =10 V; Tj(init) =25°C;
RGS =50 Ω; unclamped
-47 A
NXP Semiconductors PHP45NQ10T
N-channel TrenchMOS standard level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance
from junction to
mounting base
--1 K/W
Rth(j-a) thermal resistance
from junction to
ambient
in free air - 60 - K/W
NXP Semiconductors PHP45NQ10T
N-channel TrenchMOS standard level FET Characteristics
Table 6. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj= -55°C 89 - - V =0.25mA; VGS =0V; Tj=25°C 100 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj= -55°C --6 V =1mA; VDS =VGS; Tj= 175°C 1 - - V =1mA; VDS =VGS; Tj=25°C 234V
IDSS drain leakage current VDS =100 V; VGS =0V; Tj= 175°C - - 500 µA
VDS =100 V; VGS =0V; Tj=25°C - 0.05 10 µA
IGSS gate leakage current VGS =10V; VDS =0V; Tj=25°C - 0.02 100 nA
VGS =-10 V; VDS =0V; Tj=25°C - 0.02 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A; Tj= 175°C - - 68 mΩ
VGS =10V; ID =25A; Tj=25°C - 22 25 mΩ
Dynamic characteristicsQG(tot) total gate charge ID =45A; VDS =80V; VGS =10V; =25°C
-61 -nC
QGS gate-source charge - 13 - nC
QGD gate-drain charge - 25 - nC
Ciss input capacitance VDS =25V; VGS=0 V; f=1 MHz; =25°C 2600 - pF
Coss output capacitance - 340 - pF
Crss reverse transfer
capacitance 195 - pF
td(on) turn-on delay time VDS =50V; RL =1.8 Ω; VGS =10V;
RG(ext) =5.6 Ω; Tj =25°C
-18 -ns rise time - 72 - ns
td(off) turn-off delay time - 69 - ns fall time - 58 - ns internal drain
inductance
from tab to centre of die ; Tj=25°C - 3.5 - nH
from drain lead to centre of die; =25°C
-4.5 -nH internal source
inductance
from source lead to source bond pad; =25°C
-7.5 -nH
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0V; Tj=25°C - 0.87 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs; VGS =0V;
VDS =25V; Tj =25°C
-82 -ns recovered charge - 0.26 - µC
NXP Semiconductors PHP45NQ10T
N-channel TrenchMOS standard level FET
