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PHK5NQ15T
TrenchMOS(tm)standard level FET
PHK5NQ15T renchMOS™ standard level FET
Rev. 01 — 20 January 2003 Product dataM3D315
Product profile
1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHK5NQ15T in SOT96-1 (SO8).
1.2 Features Low on-state resistance Surface mount package.
1.3 Applications DC-DC primary side switching General purpose switch.
1.4 Quick reference data Pinning information VDS≤ 150V � ID≤ 5A Ptot≤ 6.25W � RDSon≤75 mΩ
Table 1: Pinning - SOT96-1, simplified outline and symbol1,2,3 source (s)
SOT96-1 gate (g)
5,6,7,8 drain (d)
Top view MBK187 s
MBB076
Philips Semiconductors PHK5NQ15T
TrenchMOS™ standard level FET Limiting values
Table 2: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) 25°C ≤ Tj≤ 150°C - 150 V
VDGR drain-gate voltage (DC) 25°C≤Tj≤ 150 °C; RGS =20kΩ - 150 V
VGS gate-source voltage (DC) - ±20 V drain current (DC) Tsp =25 °C; VGS =10V; Figure2 and3 -5 A
Tsp= 100 °C; VGS =10V; Figure2 - 3.23 A
IDM peak drain current Tsp =25 °C; pulsed; tp≤10 μs; Figure3 -20 A
Ptot total power dissipation Tsp =25 °C; Figure1 - 6.25 W
Tstg storage temperature −55 +150 °C junction temperature −55 +150 °C
Source-drain diode source (diode forward) current (DC) Tsp =25 °C- 5 A
ISM peak source (diode forward) current Tsp =25 °C; pulsed; tp≤10μs - 20 A
Philips Semiconductors PHK5NQ15T
TrenchMOS™ standard level FET
Philips Semiconductors PHK5NQ15T
TrenchMOS™ standard level FET Thermal characteristics
4.1 Transient thermal impedance
Table 3: Thermal characteristicsRth(j-sp) thermal resistance from junction to solder point Figure4 --20 K/W
Rth(j-a) thermal resistance from junction to ambient minimum footprint;
mountedon printed-circuit board 70 - K/W
Philips Semiconductors PHK5NQ15T
TrenchMOS™ standard level FET Characteristics
Table 4: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown voltage ID= 250 μA; VGS =0V =25°C 150 - - V= −55°C 134 - - V
VGS(th) gate-source threshold voltage ID=1 mA; VDS =VGS; Figure9 =25°C 234V= 150°C 1.2 - - V= −55°C - - 4.5 V
IDSS drain-source leakage current VDS= 120 V; VGS =0V =25°C --1 μA= 150°C - - 100 μA
IGSS gate-source leakage current VGS= ±10 V; VDS=0V - 10 100 nA
RDSon drain-source on-state resistance VGS=10 V; ID =5A; Figure7 and8 =25°C - 56 75 mΩ= 150°C - 129 173 mΩ
VGS =5V; ID=3A - 6080mΩ
Dynamic characteristicsQg(tot) total gate charge ID=5 A; VDD =75V; VGS =10V; Figure13 -29 - nC
Qgs gate-source charge - 3 - nC
Qgd gate-drain (Miller) charge - 12 - nC
Ciss input capacitance VGS =0V; VDS=25 V; f=1 MHz; Figure12 - 1150- pF
Coss output capacitance - 187 - pF
Crss reverse transfer capacitance - 61 - pF
td(on) turn-on delay time VDD =75V; ID= 5A; VGS =10V; RG =6Ω -12 - ns rise time -12 - ns
td(off) turn-off delay time - 35 - ns fall time -18 - ns
Source-drain diodeVSD source-drain (diode forward) voltageIS=5 A; VGS =0V; Figure11 - 0.8 1.2 V
trr reverse recovery time IS=5 A; dIS/dt= −100 A/μs; VR =90V;
VGS =0V
-87 - ns recovered charge - 162 - nC
Philips Semiconductors PHK5NQ15T
TrenchMOS™ standard level FET
