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PHK12NQ03LT
TrenchMOS(tm) logic level FET
PHK12NQ03LT renchMOS™ logic level FET
Rev. 01 — 22 March 2002 Product dataM3D315
Product profile
1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHK12NQ03LT in SOT96-1 (SO8).
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Low on-state resistance � Fast switching DC to DC converters � Portable equipment applications VDS = 30V � ID = 12A Ptot = 2.5 W � RDSon = 14 mΩ
Table 1: Pinning - SOT96-1, simplified outline and symbol1,2,3 source (s)
SOT96-1 (SO8) gate (g)
5,6,7,8 drain (d)
Top view MBK187 s
MBB076
Philips Semiconductors PHK12NQ03LT
TrenchMOS™ logic level FET Limiting values
Table 2: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) Tj =25to150°C - 30 V
VGS gate-source voltage - ±20 V drain current Tsp =25 °C; Figure2 and3 -12 A
IDM peak drain current Tsp =25 °C; pulsed; Figure3 -45 A
Ptot total power dissipation Tsp =25 °C; Figure1 - 2.5 W
Tstg storage temperature −55 +150 °C operating junction temperature −55 +150 °C
Source-drain diode source (diode forward) current Tsp =25°C - 12 A
Philips Semiconductors PHK12NQ03LT
TrenchMOS™ logic level FET
Philips Semiconductors PHK12NQ03LT
TrenchMOS™ logic level FET Thermal characteristics
4.1 Transient thermal impedance
Table 3: Thermal characteristicsRth(j-a) thermal resistance from junction to ambient mounted on a printed circuit board;≤10 s; minimum footprint;
Figure4 60 - K/W
Philips Semiconductors PHK12NQ03LT
TrenchMOS™ logic level FET Characteristics
Table 4: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown voltage ID= 250 μA; VGS=0V 30 --V
VGS(th) gate-source threshold voltage ID= 250 μA; VDS =VGS; Tj =25 °C; Figure9 1- 2V
IDSS drain-source leakage current VDS =24V; VGS =0V =25°C --1 μA= 100°C --5 μA
IGSS gate-source leakage current VGS= ±20 V; VDS=0V - 100 nA
RDSon drain-source on-state resistance VGS= 4.5 V; ID =10A; Figure7 and8 - 1114mΩ
VGS=10 V; ID =12A; Figure7 and8 - 8.9 10.5 mΩ
Dynamic characteristicsgfs forward transconductance VDS =15V; ID =10A; - 34 - S
Qg(tot) total gate charge ID=15 A; VDD =16V; VGS =5V; Figure13 - 17.6- nC
Qgs gate-source charge - 4 - nC
Qgd gate-drain (Miller) charge - 4.4 - nC
Ciss input capacitance VGS =0V; VDS= 16 V; f=1 MHz; Figure11 - 1335- pF
Coss output capacitance - 391 - pF
Crss reverse transfer capacitance - 190 - pF
td(on) turn-on delay time VDD =16V; RD =10 Ω; VGS=10V - 10.6- ns rise time - 11.7- ns
td(off) turn-off delay time - 37 - ns fall time -19 - ns
Source-drain (reverse) diodeVSD source-drain (diode forward) voltageIS=1 A; VGS =0V; Figure12 - 0.7 1.0 V
trr reverse recovery time IS= 2.3 A; dIS/dt= −100 A/μs; VGS =0V - 70 - ns
Philips Semiconductors PHK12NQ03LT
TrenchMOS™ logic level FET
