PHE13005 Fast Delivery |IC PHOENIX CO.,LIMITED

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PHE13005
Silicon diffused power transistor
TO-220AB PHE13005
Silicon diffused power transistor21 January 2014 Product data sheet General description
High voltage, high speed NPN planar-passivated power switching transistor in a SOT78plastic package intended for use in high frequency electronic lighting ballast applications Features and benefits Fast switching• High voltage capability of 700 V• Low thermal resistance Applications Electronic lighting ballasts Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit collector current DC; Fig. 4; Fig. 1; Fig. 2 - - 4 A
Ptot total power dissipation Tmb ≤ 25 °C; Fig. 3 - - 75 W
VCESM collector-emitter peak
voltage
VBE = 0 V - - 700 V
Static characteristics
IC = 1 A; VCE = 5 V; Tmb = 25 °C;
Fig. 11 20 40hFE DC current gain
IC = 2 A; VCE = 5 V; Tmb = 25 °C;
Fig. 11 17 28
NXP Semiconductors PHE13005
Silicon diffused power transistor Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol B base C collector E emitter C mounting base; connected tocollector2
TO-220AB (SOT78)
sym123 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PHE13005 TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78 Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCESM collector-emitter peak voltage VBE = 0 V - 700 V
VCBO collector-base voltage IE = 0 A - 700 V
VCEO collector-emitter voltage IB = 0 A - 400 V collector current DC; Fig. 4; Fig. 1; Fig. 2 - 4 A
ICM peak collector current - 8 A base current DC - 2 A
IBM peak base current - 4 A
Ptot total power dissipation Tmb ≤ 25 °C; Fig. 3 - 75 W
Tstg storage temperature -65 150 °C - 150 °C - 9 V
NXP Semiconductors PHE13005
Silicon diffused power transistor
001aab999
DUTIBon
VBB
VCC
VCL(CE)probe point
Fig. 1. Test circuit for reverse bias safe operating area
VCL(CE)(V)0 800600200 400
003aad544(A)
VBE=-5V
Fig. 2. Reverse bias safe operating area
03aa13
120 50 100 150 200Th (°C)
Pder(%)
Fig. 3. Normalized total power dissipation as a function of heatsink temperature
NXP Semiconductors PHE13005
Silicon diffused power transistor
001aai071
102(A)
VCL(CE)(V)1 10310210
(1)
100µs
200µs
(3)=20µs
duty cycle= 0.01µs
500µsDC
(4)
(5)
(2)
ICM(max)IC(max)
Fig. 4. Forward bias safe operating area Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance
from junction tomounting base
Fig. 5 - - 1.67 K/W
Rth(j-a) thermal resistance
from junction toambient
in free air - 60 - K/W
003aad543 10
Zth(j-mb)
(K/W)0.5
NXP Semiconductors PHE13005
Silicon diffused power transistor Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Dynamic characteristics
IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A;
RL = 75 Ω; Tmb = 25 °C; resistive load;
Fig. 12; Fig. 13 2.7 4 µs
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 µH; Tmb = 25 °C; inductive load;
Fig. 14; Fig. 15 1.2 2 µs storage time
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 µH; Tmb = 100 °C; inductive
load; Fig. 14; Fig. 15 1.4 4 µs
IC = 2 A; IBon = 0.4 A; IBoff = -0.4 A;
RL = 75 Ω; Tmb = 25 °C; resistive load;
Fig. 12; Fig. 13 0.3 0.9 µs
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 µH; Tmb = 25 °C; inductive load;
Fig. 14; Fig. 15 0.1 0.5 µs fall time
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 µH; Tmb = 100 °C; inductive
load; Fig. 14; Fig. 15 0.16 0.9 µs
Static characteristics
VBE = -1.5 V; VCE = 700 V; Tj = 25 °C - - 1 mAICES collector-emitter cut-offcurrent VBE = -1.5 V; VCE = 700 V; Tj = 100 °C - - 5 mA
ICBO collector-base cut-offcurrent VCB = 700 V; IE = 0 A; Tmb = 25 °C - - 1 mA
ICEO collector-emitter cut-off
current
VCE = 400 V; IB = 0 A; Tmb = 25 °C - - 0.1 mA
IEBO emitter-base cut-offcurrent VEB = 9 V; IC = 0 A; Tmb = 25 °C - - 1 mA
VCEOsus collector-emitter
sustaining voltage
IB = 0 A; IC = 10 mA; LC = 25 mH;
Tmb = 25 °C; Fig. 6; Fig. 7
400 - - V
IC = 1 A; IB = 0.2 A; Tmb = 25 °C; Fig. 8;
Fig. 9 0.1 0.5 V
IC = 2 A; IB = 0.5 A; Tmb = 25 °C; Fig. 8;
Fig. 9 0.2 0.6 V
VCEsat collector-emitter
saturation voltage
IC = 4 A; IB = 1 A; Tmb = 25 °C; Fig. 8;
Fig. 9 0.3 1 V
VBEsat base-emitter saturation
voltage
IC = 1 A; IB = 0.2 A; Tmb = 25 °C;
Fig. 10 0.85 1.2 V
NXP Semiconductors PHE13005
Silicon diffused power transistor
Symbol Parameter Conditions Min Typ Max Unit
IC = 2 A; IB = 0.5 A; Tmb = 25 °C;
Fig. 10 0.92 1.6 V
IC = 1 A; VCE = 5 V; Tmb = 25 °C;
Fig. 11 20 40hFE DC current gain
IC = 2 A; VCE = 5 V; Tmb = 25 °C;
Fig. 11 17 28
001aab987
horizontal300ΩV
vertical
oscilloscopeV
100Ωto200ΩHzto60Hz
Fig. 6. Test circuit for collector-emitter sustaining
voltage
001aab988
VCE(V)minVCEOsus(mA)
Fig. 7. Oscilloscope display for collector-emitter
sustaining voltage test waveform
003aad540
VCEsat(V)A3A4AIC=1A
003aad542
VCEsat(V)(A)10-1 101
Fig. 9. Collector-emitter saturation voltage as afunction of collector current; typical values

Partno	Mfg	Dc	Qty	Available	Descript
PHE13005	NXP	N/a	4000	avai	Silicon diffused power transistor