PHC2300 ,Complementary enhancement mode MOS transistorsAPPLICATIONS3s source 22• Universal line interface in telephone sets 4g gate 22• Relay, high-speed ..
PHC2300 ,Complementary enhancement mode MOS transistorsFEATURES PINNING - SOT96-1 (SO8)• High-speed switchingPIN SYMBOL DESCRIPTION• No secondary breakdow ..
PHC2300 ,Complementary enhancement mode MOS transistorsDISCRETE SEMICONDUCTORSDATA SHEETM3D315PHC2300Complementary enhancementmode MOS transistorsProduct ..
PHC2300 ,Complementary enhancement mode MOS transistorsAPPLICATIONS3s source 22• Universal line interface in telephone sets 4g gate 22• Relay, high-speed ..
PHC2300 ,Complementary enhancement mode MOS transistors
PHD101NQ03LT ,TrenchMOS(tm) logic level FETPHB/PHD101NQ03LTTrenchMOS™ logic level FETRev. 02 — 25 February 2003 Product data1. DescriptionN-ch ..
PL-IRM0101-3 , INFRARED REMOTE CONTROL RECEIVER MODULE
PL-IRM0208-A538 , RECEIVER MODULE
PLL102-04SC , Low Skew Output Buffer
PLL102-05SC , Low Skew Output Buffer
PLL102-05SC , Low Skew Output Buffer
PLL102-05SC , Low Skew Output Buffer
PHC2300
Complementary enhancement mode MOS transistors
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors PHC2300
FEATURES High-speed switching No secondary breakdown.
APPLICATIONS Universal line interface in telephone sets Relay, high-speed and line transformer drivers.
DESCRIPTIONOne N-channel and one P-channel enhancement mode
MOS transistor in an 8-pin plastic SOT96-1 (SO8)
package.
PINNING - SOT96-1 (SO8)
QUICK REFERENCE DATA
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors PHC2300
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Ts is the temperature at the soldering point of the drain leads. Pulse width and duty cycle limited by maximum junction temperature. Maximum permissible dissipation per MOS transistor (both devices may thus be loaded up to 1.6 W at the same
time). Maximum permissible dissipation per MOS transistor. Value basedona printed-circuit board withanRth a-tp(ambient
to tie-point) of 27.5 K/W. Maximum permissible dissipation per MOS transistor. Value basedona printed-circuit board withanRth a-tp(ambient
to tie-point) of 90 K/W. Maximum permissible dissipationif only one MOS transistor dissipates. Value basedona printed-circuit board with
an Rtha-tp (ambient to tie-point) of 90 K/W.
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors PHC2300
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors PHC2300
THERMAL CHARACTERISTICS
CHARACTERISTICS =25 °C unless otherwise specified.
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors PHC2300
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors PHC2300
Philips Semiconductors Product specification
Complementary enhancement mode
MOS transistors PHC2300
