PHC21025 ,Complementary enhancement mode MOS transistorsDISCRETE SEMICONDUCTORSDATA SHEETPHC21025Complementary enhancementmode MOS transistors1997 Jun 20Pr ..
PHC2300 ,Complementary enhancement mode MOS transistorsAPPLICATIONS3s source 22• Universal line interface in telephone sets 4g gate 22• Relay, high-speed ..
PHC2300 ,Complementary enhancement mode MOS transistorsFEATURES PINNING - SOT96-1 (SO8)• High-speed switchingPIN SYMBOL DESCRIPTION• No secondary breakdow ..
PHC2300 ,Complementary enhancement mode MOS transistorsDISCRETE SEMICONDUCTORSDATA SHEETM3D315PHC2300Complementary enhancementmode MOS transistorsProduct ..
PHC2300 ,Complementary enhancement mode MOS transistorsAPPLICATIONS3s source 22• Universal line interface in telephone sets 4g gate 22• Relay, high-speed ..
PHC2300 ,Complementary enhancement mode MOS transistors
PL-IRM0101-3 , INFRARED REMOTE CONTROL RECEIVER MODULE
PL-IRM0208-A538 , RECEIVER MODULE
PLL102-04SC , Low Skew Output Buffer
PLL102-05SC , Low Skew Output Buffer
PLL102-05SC , Low Skew Output Buffer
PLL102-05SC , Low Skew Output Buffer
PHC21025
Complementary enhancement mode MOS transistors
Philips Semiconductors Product specification
Complementary enhancement
mode MOS transistors PHC21025
FEATURES High-speed switching No secondary breakdown Very low on-resistance.
APPLICATIONS Motor and actuator driver Power management Synchronized rectification.
DESCRIPTIONOne N-channel and one P-channel enhancement mode
MOS transistor in an 8-pin plastic SOT96-1 (SO8)
package.
PINNING - SOT96-1 (SO8)
QUICK REFERENCE DATA
Philips Semiconductors Product specification
Complementary enhancement
mode MOS transistors PHC21025
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Notes Pulse width and duty cycle limited by maximum junction temperature. Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same time. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rtha-tp
(ambient to tie-point) of 27.5 K/W. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rtha-tp
(ambient to tie-point) of 90 K/W. Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with
an Rtha-tp (ambient to tie-point) of 90 K/W.
Philips Semiconductors Product specification
Complementary enhancement
mode MOS transistors PHC21025
Philips Semiconductors Product specification
Complementary enhancement
mode MOS transistors PHC21025
THERMAL CHARACTERISTICS
CHARACTERISTICS =25 °C unless otherwise specified.
Philips Semiconductors Product specification
Complementary enhancement
mode MOS transistors PHC21025
Philips Semiconductors Product specification
Complementary enhancement
mode MOS transistors PHC21025
Philips Semiconductors Product specification
Complementary enhancement
mode MOS transistors PHC21025
