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Partno	Mfg	Dc	Qty	Available	Descript
PHB47NQ10T	PHILIPS	N/a	500	avai	N-channel enhancement mode field-effect transistor
PHP47NQ10T	PHI	N/a	10	avai	N-channel enhancement mode field-effect transistor

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PHB47NQ10T-PHP47NQ10T
N-channel enhancement mode field-effect transistor
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Rev. 01 — 16 May 2001 Product data Description
N-channel enhancement mode field-effect power transistorina plastic package using
TrenchMOS™1 technology.
Product availability:
PHP47NQ10T in SOT78 (TO-220AB)
PHB47NQ10T in SOT404 (D2 -PAK). Features Fast switching Very low on-state resistance. Applications DC to DC converters Switched mode power supplies. Pinning information
[1] It is not possible to make connection to pin 2 of the SOT404 package. TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol gate (g)
SOT78 (TO-220AB) SOT404 (D2 -PAK) drain (d) [1] source (s) mounting base;
connected to
drain (d)
MBK106
MBK116
MBB076
Philips Semiconductors PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor Quick reference data Limiting values
Table 2: Quick reference data
VDS drain-source voltage (DC) Tj =25to175°C − 100 V drain current (DC) Tmb =25 °C; VGS =10V − 47 A
Ptot total power dissipation Tmb =25°C − 166 W junction temperature − 175 °C
RDSon drain-source on-state resistance Tj =25 °C; VGS =10V; ID=25A 20 28 mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) Tj =25to175°C − 100 V
VDGR drain-gate voltage (DC) Tj =25to175 °C; RGS =20kΩ− 100 V
VGS gate-source voltage (DC) −±20 V drain current (DC) Tmb =25 °C; VGS =10V
Figure2 and3 47 A
Tmb= 100 °C; VGS =10V
Figure2 33 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs;
Figure3 187 A
Ptot total power dissipation Tmb =25 °C; Figure1 − 166 W
Tstg storage temperature −55 175 °C operating junction temperature −55 175 °C
Source-drain diode source (diode forward) current
(DC)
Tmb =25°C − 47 A
ISM peak source (diode forward)
current
Tmb =25 °C; pulsed; tp≤10μs − 187 A
Avalanche ruggedness
EAS non-repetitive avalanche energy unclamped inductive load;
IAS=30 A; tp= 0.1 ms; VDD≤25V;
RGS =50 Ω; VGS=5 V; starting =25 °C; Figure4 45 mJ
Philips Semiconductors PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Philips Semiconductors PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristics
Rth(j-mb) thermal resistance from junction to mounting
base
Figure5 0.9 K/W
Rth(j-a) thermal resistance from junction to ambient SOT78 package; vertical in still air. 60 K/W
Rth(j-a) thermal resistance from junction to ambient SOT404 package; mounted on
printed circuit board; minimum
footprint. K/W
Philips Semiconductors PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor Characteristics
Table 5: Characteristics =25 °C unless otherwise specified
Static characteristics
V(BR)DSS drain-source breakdown
voltage= 250 μA; VGS =0V 100 −− V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure10 =25 °C2 3 4 V= 175 °C1 −− V
IDSS drain-source leakage current VGS =0V; VDS= 100V =25°C − 0.05 10 μA= 175°C −− 500 μA
IGSS gate-source leakage current VDS =0V; VGS= ±20V − 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A;
Figure8 and9 =25oC − 20 28 mΩ= 175°C −− 76 mΩ
Dynamic characteristics
Qg(tot) total gate charge ID=40 A; VDD =80V;
VGS =10V; Figure15 66 − nC
Qgs gate-source charge − 12 − nC
Qgd gate-drain (Miller) charge − 21 − nC
Ciss input capacitance VGS =0V; VDS =25V;=1 MHz; Figure13 2320 3100 pF
Coss output capacitance − 315 378 pF
Crss reverse transfer capacitance − 187 256 pF
td(on) turn-on delay time VDD=30 V; RD= 1.2Ω;
VGS =10V; RG =10Ω 15 23 ns rise time − 70 105 ns
td(off) turn-off delay time − 83 116 ns fall time − 45 63 ns
Source-drain diode
VSD source-drain (diode forward)
voltage=25 A; VGS =0V;
Figure14 0.85 1.2 V
trr reverse recovery time IS =47A;
dIS/dt= −100 A/μs;
VGS= -10 V; VR =30V 66 − ns recovered charge − 0.24 −μC
Philips Semiconductors PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Philips Semiconductors PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor

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