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PHB29N08T
N-channel TrenchMOS standard level FET
PHB29N08T
N-channel TrenchMOS standard level FET
Rev. 03 — 13 October 2009 Product data sheet Product profile
1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits High noise immunity due to high gate
threshold voltage Low conduction losses due to low
on-state resistance
1.3 Applications Industrial motor control
1.4 Quick reference data Table 1. Quick referenceVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 75 V drain current Tmb =25°C; VGS =11V;
see Figure 1 and 3
--27 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 --88 W
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =29A;
VDS =60V; Tj =25°C;
see Figure 11 -nC
Static characteristicsRDSon drain-source
on-state resistance
VGS =11V; ID =14A; = 175 °C; see Figure 9 and 10 96 120 mΩ
VGS =11V; ID =14A; Tj =25°C;
see Figure 9 and 10 4050mΩ
NXP Semiconductors PHB29N08T
N-channel TrenchMOS standard level FET Pinning information[1] It is not possible to make connection to pin 2.
Ordering information Limiting values
Table 2. Pinning information gate
SOT404 (D2PAK) drain [1] source D mounting base, connected to
drain
Table 3. Ordering informationPHB29N08T D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 75 V
VDGR drain-gate voltage Tj≤ 175 °C; Tj≥25 °C; RGS =20kΩ -75 V
VGS gate-source voltage -30 30 V drain current VGS =11V; Tmb= 100 °C; see Figure 1 -19.2 A
VGS =11V; Tmb =25°C; see Figure 1 and 3 -27 A
IDM peak drain current tp≤10 µs; pulsed; Tmb =25°C; see Figure 3 -108 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -88 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C - 27 A
ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 108 A
NXP Semiconductors PHB29N08T
N-channel TrenchMOS standard level FET
NXP Semiconductors PHB29N08T
N-channel TrenchMOS standard level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from
junction to mounting
base
see Figure 4 --1.7 K/W
Rth(j-a) thermal resistance from
junction to ambient
SOT404 minimum footprint; mounted on a
printed-circuit board
-50 - K/W
NXP Semiconductors PHB29N08T
N-channel TrenchMOS standard level FET CharacteristicsTable 6. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0V; Tj =-55°C 70 - - V =0.25mA; VGS =0V; Tj =25°C 75 - - V
VGS(th) gate-source threshold
voltage =2mA; VDS = VGS; Tj= 175 °C;
see Figure 8
2.1 - - V =2mA; VDS = VGS; Tj =-55 °C;
see Figure 8
--5.4 V =2mA; VDS = VGS; Tj =25°C;
see Figure 8
345 V
IDSS drain leakage current VDS =75V; VGS =0V; Tj=25°C - 0.05 10 µA
VDS =75V; VGS =0V; Tj= 175°C - - 500 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 10 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state
resistance
VGS =11V; ID =14A; Tj= 175 °C;
see Figure 9 and 10
-96 120 mΩ
VGS =11V; ID =14A; Tj =25°C;
see Figure 9 and 10
-40 50 mΩ
Dynamic characteristicsQG(tot) total gate charge ID =29A; VDS =60V; VGS =10V; =25°C; see Figure 11
-19 - nC
QGS gate-source charge - 6 - nC
QGD gate-drain charge - 9 - nC
Ciss input capacitance VDS =25V; VGS=0 V; f=1 MHz; =25°C; see Figure 12 810 - pF
Coss output capacitance - 140 - pF
Crss reverse transfer
capacitance
-85 - pF
td(on) turn-on delay time VDS =38V; RL =1.3 Ω; VGS =10V;
RG(ext) =5.6 Ω; Tj =25°C; ID =29A
-9.5 - ns rise time - 70 - ns
td(off) turn-off delay time - 15 - ns fall time - 9 - ns
Source-drain diodeVSD source-drain voltage IS =14A; VGS =0V; Tj =25°C;
see Figure 13 0.95 1.2 V
trr reverse recovery time IS =14A; dIS/dt= -100 A/µs; VGS =0V;
VDS =25V; Tj =25°C
-50 - ns recovered charge - 65 - nC
NXP Semiconductors PHB29N08T
N-channel TrenchMOS standard level FET
