PH2925U ,N-channel TrenchMOS⑩ ultra low level FETPH2925UN-channel TrenchMOS™ ultra low level FETM3D748 Rev. 02 — 08 April 2004 Product data1. Produc ..
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PH2925U
N-channel TrenchMOS⑩ ultra low level FET
PH2925UN-channel T renchMOS™ ultra low level FET
Rev. 02 — 08 April 2004 Product dataM3D748
Product profile
1.1 DescriptionN-channel enhancement mode field-effect power transistorina plastic package using
TrenchMOS™ technology.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information Low thermal resistance � SO8 equivalent area footprint Low threshold voltage � Low on-state resistance. DC-to-DC converters � Switched-mode power supplies Portable appliances � Notebook computers. VDS≤25V � ID≤ 100A Ptot≤ 62.5W � RDSon≤ 2.9 mΩ
Table 1: Pinning - SOT669 (LFPAK), simplified outline and symbol1,2,3 source (s)
SOT669 (LFPAK) gate (g) mounting base;
connectedto drain(d)
Top view MBL286
MBB076
Philips Semiconductors PH2925U
N-channel TrenchMOS™ ultra low level FET Ordering information Limiting values
Table 2: Ordering informationPH2925U LFPAK Plastic single-ended surface mounted package; 4 leads SOT669
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) 25°C≤Tj≤ 150°C - 25 V
VGS gate-source voltage (DC) - ±10 V drain current (DC) Tmb =25 °C; VGS= 4.5V; Figure2 and3 - 100 A
Tmb= 100 °C; VGS= 4.5V; Figure2 -71 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs; Figure3 - 300 A
Ptot total power dissipation Tmb =25 °C; Figure1 - 62.5 W
Tstg storage temperature −55 +150 °C junction temperature −55 +150 °C
Source-drain diode source (diode forward) current (DC) Tmb =25°C - 52 A
ISM peak source (diode forward) current Tmb =25 °C; pulsed; tp≤10μs - 150 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID= 70.7A;= 0.22 ms; VDD≤25 V; VGS =10V;
startingTj =25°C 250 mJ
Philips Semiconductors PH2925U
N-channel TrenchMOS™ ultra low level FET
Philips Semiconductors PH2925U
N-channel TrenchMOS™ ultra low level FET Thermal characteristics
5.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting base Figure4 --2K/W
Philips Semiconductors PH2925U
N-channel TrenchMOS™ ultra low level FET Characteristics
Table 5: Characteristics =25 °C unless otherwise specified.
Static characteristicsV(BR)DSS drain-source breakdown voltage ID= 250 μA; VGS=0V 25 --V
VGS(th) gate-source threshold voltage ID=1 mA; VDS =VGS; Figure9 =25°C 0.45 0.7 - V= 150°C 0.25- - V
IDSS drain-source leakage current VDS =25V; VGS =0V =25°C - 0.061 μA= 150°C - - 500 μA
IGSS gate-source leakage current VGS= ±10 V; VDS=0V - 20 100 nA
RDSon drain-source on-state resistance VGS= 4.5 V; ID =25A; Figure7 and8 =25°C - 2.3 2.9 mΩ= 150°C - 3.9 4.9 mΩ
VGS= 2.5 V; ID=25A - 3.2 3.7 mΩ
Dynamic characteristicsQg(tot) total gate charge ID=50 A; VDD =10V; VGS= 4.5V; Figure13 -92 - nC
Qgs gate-source charge - 12 - nC
Qgd gate-drain (Miller) charge - 20.2- nC
Ciss input capacitance VGS =0V; VDS=10 V; f=1 MHz; Figure11 -6150 -pF
Coss output capacitance - 1170- pF
Crss reverse transfer capacitance - 814 - pF
td(on) turn-on delay time VDD =10V; ID=25 A; VGS= 4.5 V; RG= 4.7Ω -30 - ns rise time -80 - ns
td(off) turn-off delay time - 258 - ns fall time - 114 - ns
Source-drain diodeVSD source-drain (diode forward) voltageIS=25 A; VGS =0V; Figure12 - 0.72 1.2 V
trr reverse recovery time IS=20 A; dIS/dt= −100 A/μs;
VDS =25V;VGS =0V
-60 - ns
Philips Semiconductors PH2925U
N-channel TrenchMOS™ ultra low level FET
