PESD5V0X1BQ ,Ultra low capacitance bidirectional ESD protection diodesGeneral descriptionUltra low capacitance bidirectional ElectroStatic Discharge (ESD) protection dio ..
PESD5V0X1BT ,Ultra low capacitance bidirectional ESD protection diodesFeaturesn Bidirectional ESD protection of one line n ESD protection up to 9 kVn Unidirectional ESD ..
PESD5V2S2UT ,Double ESD protection diodes in SOT23 packageAPPLICATIONSPINNING• Computers and peripheralsPIN DESCRIPTION• Communication systems1 cathode 1• Au ..
PESD5Z12 ,Low capacitance unidirectional ESD protection diodesFeaturesn ESD protection of one line n Low leakage current: I <1nARMn Low diode capacitance n ESD p ..
PESD5Z12 ,Low capacitance unidirectional ESD protection diodesApplicationsn Computers and peripherals n Portable electronicsn Audio and video equipment n Subscri ..
PESD5Z3.3 ,Low capacitance unidirectional ESD protection diodesLimiting valuesTable 6.
PIP201-12M-3 ,DC-to-DC converter powertrain
PIP202-12M ,DC to DC converter powertrain
PIP202-12M ,DC to DC converter powertrain
PIP3101-A ,Logic level TOPFET
PIP3101-A ,Logic level TOPFET
PIP3101-A ,Logic level TOPFET
PESD5V0X1BQ-PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
Product profile1.1 General descriptionUltra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
The devices may also be used for unidirectional ESD protection of up to two signal lines.
1.2 Features
1.3 Applications
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
Rev. 01 — 30 October 2008 Product data sheet
Table 1. Product overviewPESD5V0X1BQ SOT663 - ultra small and flat lead
PESD5V0X1BT SOT23 TO-236AB very small Bidirectional ESD protection of one line n ESD protection up to9kV Unidirectional ESD protection of up to
two lines IEC 61000-4-2; level 4 (ESD) Ultra low diode capacitance:Cd= 0.9pFn AEC-Q101 qualified Very low leakage current: IRM =1nA USB interfaces n Subscriber Identity Module (SIM) card
protection Antenna protection n Computers, peripherals and printers Radio Frequency (RF) protection n Cellular handsets and accessories 10/100/1000 Mbit/s Ethernet n Portable electronics FireWire n Communication systems Asymmetric Digital Subscriber Line
(ADSL) Audio and video equipment High-speed data lines
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
1.4 Quick reference data[1] Bidirectional configuration: measured from pin 1 to 2 or pin 2 to1.
[2] Unidirectional configuration: measured from pin 1 to 3 or pin 2 to3.
Pinning information Ordering information
Table 2. Quick reference dataTamb =25 °C unless otherwise specified.
Per diodeVRWM reverse standoff voltage - - 5 V diode capacitance f=1 MHz; VR =0V [1]- 0.9 1.3 pF
[2]- 2 2.6 pF
Table 3. Pinning
PESD5V0X1BQ cathode (diode1) cathode (diode2) common anode
PESD5V0X1BT cathode (diode1) cathode (diode2) common anode
006aaa154
006aaa154
Table 4. Ordering informationPESD5V0X1BQ - plastic surface-mounted package; 3 leads SOT663
PESD5V0X1BT - plastic surface-mounted package; 3 leads SOT23
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Limiting values[1] Device stressed with ten non-repetitive ESD pulses.
Table 5. Marking codesPESD5V0X1BQ E6
PESD5V0X1BT U3*
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per device junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. ESD maximum ratingsTamb =25 °C unless otherwise specified.
Per diodeVESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1] -9 kV
MIL-STD-883 (human
body model)
-10 kV
Table 8. ESD standards compliance
Per diodeIEC 61000-4-2; level 4 (ESD) >8kV (contact)
MIL-STD-883; class 3 (human body model) >4kV
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes Characteristics[1] Bidirectional configuration: measured from pin 1 to 2 or pin 2 to1.
[2] Unidirectional configuration: measured from pin 1 to 3 or pin 2 to3.
Table 9. CharacteristicsTamb =25 °C unless otherwise specified.
Per diodeVRWM reverse standoff
voltage
--5 V
IRM reverse leakage current VRWM=5V - 1 100 nA
VBR breakdown voltage IR=5 mA 5.8 7.5 9.5 V diode capacitance f=1MHz =0V [1]- 0.9 1.3 pF
[2]- 2 2.6 pF =5V [1]- 0.8 1.2 pF
[2]- 1.7 2.3 pF
rdif differential resistance IR=1 mA - - 100 Ω
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes Application informationPESD5V0X1BQ and PESD5V0X1BT are designed for the protection of one bidirectional
data or signal line from the damage caused by ESD. The devices may be used on lines
where the signal polarities are both, positive and negative with respect to ground.
PESD5V0X1BQ and PESD5V0X1BT may also be used for the protection of two
unidirectional data or signal lines, which have positive signal polarities with respect to
ground.
Circuit board layout and protection device placementCircuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended: Place the device as close to the input terminal or connector as possible. The path length between the device and the protected line should be minimized. Keep parallel signal paths to a minimum. Avoid running protected conductors in parallel with unprotected conductors. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops. Minimize the length of the transient return path to ground. Avoid using shared transient return paths to a common ground point. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
Test information
8.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
