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PESD5V0X1BL
Ultra low capacitance bidirectional ESD protection diode
Product profile1.1 General descriptionUltra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
SOD882 leadless ultra small Surface-Mounted Device (SMD) plastic package designed protect one signal line from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESD5V0X1BL
Ultra low capacitance bidirectional ESD protection diode
Rev. 02 — 16 July 2009 Product data sheet Bidirectional ESD protection of one line n ESD protection up to9kV Ultra low diode capacitance:Cd= 0.9pFn IEC 61000-4-2; level 4 (ESD) Very low leakage current: IRM =1nA n AEC-Q101 qualified USB interfaces n Cellular handsets and accessories Antenna protection n Portable electronics 10/100/1000 Mbit/s Ethernet n Communication systems FireWire n Computers and peripherals High-speed data lines n Audio and video equipment Subscriber Identity Module (SIM) card
protection
Table 1. Quick reference dataTamb =25 °C unless otherwise specified.
Per diodeVRWM reverse standoff voltage - - 5 V diode capacitance f=1 MHz; VR=0V - 0.9 1.3 pF
NXP Semiconductors PESD5V0X1BL
Ultra low capacitance bidirectional ESD protection diode Pinning information[1] The marking bar indicates pin1.
Ordering information Marking Limiting values[1] Device stressed with ten non-repetitive ESD pulses.
Table 2. Pinning cathode (diode1) [1] cathode (diode2)
Transparent
top view
006aab041
Table 3. Ordering informationPESD5V0X1BL - leadless ultra small plastic package; 2 terminals;
body 1.0× 0.6× 0.5 mm
SOD882
Table 4. Marking codesPESD5V0X1BL XX
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per device junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. ESD maximum ratingsTamb =25 °C unless otherwise specified.
Per diodeVESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1] -9 kV
MIL-STD-883 (human
body model)
-10 kV
NXP Semiconductors PESD5V0X1BL
Ultra low capacitance bidirectional ESD protection diode
Table 7. ESD standards compliance
Per diodeIEC 61000-4-2; level4 (ESD) >8kV (contact)
MIL-STD-883; class 3 (human body model) >4kV
NXP Semiconductors PESD5V0X1BL
Ultra low capacitance bidirectional ESD protection diode Characteristics
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
Per diodeVRWM reverse standoff voltage - - 5 V
IRM reverse leakage current VRWM=5V - 1 100 nA
VBR breakdown voltage IR=5 mA 6.0 7.5 9.5 V diode capacitance f=1MHz=0V - 0.9 1.3 pF=5V - 0.8 1.2 pF
rdif differential resistance IR=1 mA - - 100 Ω
NXP Semiconductors PESD5V0X1BL
Ultra low capacitance bidirectional ESD protection diode
NXP Semiconductors PESD5V0X1BL
Ultra low capacitance bidirectional ESD protection diode Application informationPESD5V0X1BL is designed for the protection of one bidirectional data or signal line from
the damage causedby ESD. The device maybe usedon lines where the signal polarities
are both, positive and negative with respect to ground.
Circuit board layout and protection device placementCircuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended: Place the device as close to the input terminal or connector as possible. The path length between the device and the protected line should be minimized. Keep parallel signal paths to a minimum. Avoid running protected conductors in parallel with unprotected conductors. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops. Minimize the length of the transient return path to ground. Avoid using shared transient return paths to a common ground point. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
Test information
8.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
