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PESD5V0V1BB-PESD5V0V1BL
Very low capacitance bidirectional ESD protection diodes
1. Product profile
1.1 General descriptionVery low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PESD5V0V1BA;
PESD5V0V1BB; PESD5V0V1BL
Very low capacitance bidirectional ESD protection diodes
Rev. 2 — 9 November 2012 Product data sheet
Table 1. Product overviewPESD5V0V1BA SOD323 SC-76 very small
PESD5V0V1BB SOD523 SC-79 ultra small and flat lead
PESD5V0V1BL SOD882 - leadless ultra small Bidirectional ESD protection of one line ESD protection up to30 kV Very low diode capacitance: Cd =11pF IEC 61000-4-2; level 4 (ESD) Max. peak pulse power: PPP =45W IEC 61000-4-5 (surge); IPP =4.8A Low clamping voltage: VCL= 12.5V AEC-Q101 qualified Ultra low leakage current: IRM <1nA Computers and peripherals Communication systems Audio and video equipment Portable electronics Cellular handsets and accessories 10/100 Mbit/s Ethernet Subscriber Identity Module (SIM) card
protection FireWire
Table 2. Quick reference dataTamb =25 C unless otherwise specified.
VRWM reverse standoff voltage - - 5 V diode capacitance f=1 MHz; VR =0V - 11 13 pF
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
2. Pinning information[1] The marking bar indicates pin1.
3. Ordering information
4. Marking
5. Limiting values
Table 3. Pinning
PESD5V0V1BA; PESD5V0V1BB
PESD5V0V1BL
Table 4. Ordering informationPESD5V0V1BA SC-76 plastic surface-mounted package; 2 leads SOD323
PESD5V0V1BB SC-79 plastic surface-mounted package; 2 leads SOD523
PESD5V0V1BL - leadless ultra small plastic package; 2 terminals;
body 1.0 0.6 0.5 mm
SOD882
Table 5. Marking codesPESD5V0V1BA 1K
PESD5V0V1BB Z9
PESD5V0V1BL X1
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per diodePPP peak pulse power tp =8/20s [1] -45 W
IPP peak pulse current tp =8/20s [1] -4.8 A
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
[1] Device stressed with ten non-repetitive ESD pulses.
Per device junction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
Table 7. ESD maximum ratingsTamb =25 C unless otherwise specified.
VESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1] -30 kV
machine model - 2 kV
MIL-STD-883 (human
body model)
-16 kV
Table 8. ESD standards complianceIEC 61000-4-2; level4 (ESD) >15kV (air); >8kV (contact)
MIL-STD-883; class 3B (human body model) >8kV
Table 6. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
6. Characteristics[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp= 100 ns; square pulse;
ANS/IESD STM5.1-2008.
Table 9. CharacteristicsTamb =25 C unless otherwise specified.
VRWM reverse standoff voltage - - 5 V
IRM reverse leakage current VRWM =5V - < 1 10 nA
VBR breakdown voltage IR=5 mA 5.86.8 7.8V diode capacitance f=1 MHz; =0V
-11 13 pF
VCL clamping voltage IPP =4.8A [1] -- 12.5 V
rdyn dynamic resistance IR =10A [2] -0.2 -
rdif differential resistance IR =5mA - - 35
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodesNXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodesNXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
7. Application informationThe PESD5V0V1Bx series is designed for the protection of one bidirectional data or
signal line from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are both, positive or negative with respect to ground.
The PESD5V0V1Bx series provides a surge capability of 45 W per line for an 8/20 s
waveform.
Circuit board layout and protection device placementCircuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended: Place the device as close to the input terminal or connector as possible. Minimize the path length between the device and the protected line. Keep parallel signal paths to a minimum. Avoid running protected conductors in parallel with unprotected conductors. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops. Minimize the length of the transient return path to ground. Avoid using shared transient return paths to a common ground point. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
8. Test information
8.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
