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Partno	Mfg	Dc	Qty	Available	Descript
PESD5V0U4BF	NXP	N/a	6796	avai	Ultra low capacitance bidirectional quadruple ESD protection arrays
PESD5V0U4BW	NXP	N/a	388	avai	Ultra low capacitance bidirectional quadruple ESD protection arrays

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PESD5V0U4BF-PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD protection arrays
Product profile1.1 General description
Ultra low capacitance bidirectional quadruple ElectroStatic Discharge (ESD) protection
arraysin ultra small Surface-Mounted Device (SMD) plastic packages designedto protect
up to four signal lines from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD
protection arrays
Rev. 01 — 15 August 2008 Product data sheet
Table 1. Product overview
PESD5V0U4BF SOT886 MO-252 leadless ultra small
PESD5V0U4BW SOT665 - ultra small and flat lead Bidirectional ESD protection of up to
four lines ESD protection up to10 kV Ultra low diode capacitance:Cd= 2.9pFn IEC 61000-4-2; level 4 (ESD) Ultra low leakage current: IRM =5nA n AEC-Q101 qualified Computers and peripherals n Portable electronics Audio and video equipment n Subscriber Identity Module (SIM) card
protection Cellular handsets and accessories n FireWire 10/100/1000 Mbit/s Ethernet n High-speed data lines Communication systems
NXP Semiconductors PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD protection arrays
1.4 Quick reference data Pinning information Ordering information
Table 2. Quick reference data
Tamb =25 °C unless otherwise specified.
Per diode
VRWM reverse standoff voltage - - 5 V diode capacitance f=1 MHz; VR=0V - 2.9 3.5 pF
Table 3. Pinning
PESD5V0U4BF cathode (diode1) common cathode cathode (diode2) cathode (diode3) common cathode cathode (diode4)
PESD5V0U4BW cathode (diode1) common cathode cathode (diode2) cathode (diode3) cathode (diode4)
bottom view2156
006aab333 35
006aab334
Table 4. Ordering information
PESD5V0U4BF XSON6 plastic extremely thin small outline package;no leads; terminals; body 1× 1.45× 0.5 mm
SOT886
PESD5V0U4BW - plastic surface-mounted package; 5 leads SOT665
NXP Semiconductors PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD protection arrays Marking Limiting values
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin1,3,4or 6 to pin2or5.
[3] Measured from pin1,3,4or 5 to pin2.
Table 5. Marking codes
PESD5V0U4BF B1
PESD5V0U4BW A6
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per device junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. ESD maximum ratings
Tamb =25 °C unless otherwise specified.
Per diode
VESD electrostatic discharge voltage [1]
PESD5V0U4BF IEC 61000-4-2
(contact discharge)
[2] -10 kV
PESD5V0U4BW IEC 61000-4-2
(contact discharge)
[3] -10 kV
PESD5V0U4BF MIL-STD-883 (human
body model)
[2] -8 kV
PESD5V0U4BW MIL-STD-883 (human
body model)
[3] -8 kV
NXP Semiconductors PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD protection arrays
Table 8. ESD standards compliance
Per diode
IEC 61000-4-2; level 4 (ESD) >15kV (air); >8kV (contact)
MIL-STD-883; class 3 (human body model) >4kV
NXP Semiconductors PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD protection arrays Characteristics
Table 9. Characteristics
Tamb =25 °C unless otherwise specified.
Per diode
VRWM reverse standoff
voltage
--5 V
IRM reverse leakage current VRWM=5V - 5 100 nA
VBR breakdown voltage IR=5 mA 5.5 6.5 9.5 V diode capacitance f=1MHz=0V - 2.9 3.5 pF=5V - 1.9 - pF
rdif differential resistance IR=1 mA - - 100 Ω
NXP Semiconductors PESD5V0U4BF; PESD5V0U4BW
Ultra low capacitance bidirectional quadruple ESD protection arrays

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