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PESD5V0U2BT
Ultra low capacitance bidirectional double ESD protection diode
Product profile1.1 General descriptionUltra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode
in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed
to protect two data lines from the damage caused by ESD.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESD5V0U2BT
Ultra low capacitance bidirectional double ESD protection
diode
Rev. 01 — 27 March 2007 Product data sheet Bidirectional ESD protection of two linesn Ultra low leakage current: IRM =5nA Ultra low diode capacitance:Cd= 2.9pFn ESD protection of up to 10 kV IEC 61000-4-2; level4 (ESD) Computers and peripherals n Communication systems Audio and video equipment n Portable electronics Cellular handsets and accessories n Subscriber Identity Module (SIM) card
protection 10/100/1000 Ethernet n FireWire Local Area Network (LAN) equipment n High-speed data lines
Table 1. Quick reference dataTamb =25 °C unless otherwise specified.
Per diodeVRWM reverse standoff voltage - - 5 V diode capacitance f=1 MHz; VR=0V - 2.9 3.5 pF
NXP Semiconductors PESD5V0U2BT
Ultra low capacitance bidirectional double ESD protection diode Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning cathode1 cathode2 common cathode
006aaa155
Table 3. Ordering informationPESD5V0U2BT - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codesPESD5V0U2BT 1U*
NXP Semiconductors PESD5V0U2BT
Ultra low capacitance bidirectional double ESD protection diode Limiting values[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to pin2.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per device junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. ESD maximum ratings
Per diodeVESD electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
[1][2] -10 kV
MIL-STD-883 (human
body model) kV
Table 7. ESD standards compliance
Per diodeIEC 61000-4-2; level4 (ESD) >15kV (air); >8kV (contact)
MIL-STD-883; class 3 (human body model) >4kV
NXP Semiconductors PESD5V0U2BT
Ultra low capacitance bidirectional double ESD protection diode Characteristics
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
Per diodeVRWM reverse standoff voltage - - 5 V
IRM reverse leakage current VRWM=5V - 5 100 nA
VBR breakdown voltage IR=5 mA 5.5 7 9.5 V diode capacitance f=1MHz=0V - 2.9 3.5 pF=5V - 1.9 - pF
rdif differential resistance IR=1 mA - - 100 Ω
NXP Semiconductors PESD5V0U2BT
Ultra low capacitance bidirectional double ESD protection diode
NXP Semiconductors PESD5V0U2BT
Ultra low capacitance bidirectional double ESD protection diode Application informationThe PESD5V0U2BT is designed for the bidirectional protection of two signal lines from
the damage causedby ESD pulses. The PESD5V0U2BT maybe usedon lines where the
signal polarities are either positive or negative with respect to ground.
Circuit board layout and protection device placementCircuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended: Place the PESD5V0U2BT as close to the input terminal or connector as possible. The path length between the PESD5V0U2BT and the protected line should be
minimized. Keep parallel signal paths to a minimum. Avoid running protected conductors in parallel with unprotected conductors. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops. Minimize the length of the transient return path to ground. Avoid using shared transient return paths to a common ground point. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
