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PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays
Product profile1.1 General descriptionUnidirectional quadruple ElectroStatic Discharge (ESD) protection diode arraysina small
SOT886 Surface-Mounted Device (SMD) plastic package designed to protect up to four
signal lines from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays
Rev. 01 — 17 January 2008 Product data sheet ESD protection of up to four lines n ESD protection up to30 kV Max. peak pulse power: PPP= 110W n IEC 61000-4-2; level 4 (ESD) Low clamping voltage: VCL =11V n IEC 61000-4-5 (surge); IPP =10A Ultra low leakage current: IRM =4nA n AEC-Q101 qualified Computers and peripherals n Communication systems Audio and video equipment n Portable electronics Cellular handsets and accessories
Table 1. Quick reference dataTamb =25 °C unless otherwise specified.
Per diodeVRWM reverse standoff voltage
PESD3V3S4UF - - 3.3 V
PESD5V0S4UF - - 5.0 V diode capacitance f=1 MHz; VR =0V
PESD3V3S4UF - 110 300 pF
PESD5V0S4UF - 85 220 pF
NXP Semiconductors PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Limiting values
Table 2. Pinning cathode (diode1) common anode cathode (diode2) cathode (diode3) common anode cathode (diode4) bottom view
2156 006aaa156123
Table 3. Ordering informationPESD3V3S4UF XSON6 plastic extremely thin small outline package; leads; 6 terminals; body 1× 1.45× 0.5 mm
SOT886
PESD5V0S4UF
Table 4. Marking codesPESD3V3S4UF A3
PESD5V0S4UF A4
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per diodePPP peak pulse power tp= 8/20μs [1][2]- 110 W
IPP peak pulse current tp= 8/20μs [1][2] -10 A
NXP Semiconductors PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4 or 6 to pin 2 or5.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1, 3, 4 or 6 to pin 2 or5.
Per device junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. ESD maximum ratingsTamb =25 °C unless otherwise specified.
Per diodeVESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2] -30 kV
MIL-STD-883 (human
body model)
-10 kV
Table 7. ESD standards compliance
Per diodeIEC 61000-4-2; level 4 (ESD) >15kV (air); >8kV (contact)
MIL-STD-883; class 3 (human body model) >4kV
Table 5. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays Characteristics[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4 or 6 to pin 2 or5.
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
Per diodeVRWM reverse standoff voltage
PESD3V3S4UF - - 3.3 V
PESD5V0S4UF - - 5.0 V reverse current
PESD3V3S4UF VR= 3.0V - 100 1000 nA
PESD5V0S4UF VR= 4.3V - 4 100 nA
VBR breakdown voltage IR =1mA
PESD3V3S4UF 5.32 5.6 5.88 V
PESD5V0S4UF 6.46 6.8 7.14 V diode capacitance f=1 MHz; VR =0V
PESD3V3S4UF - 110 300 pF
PESD5V0S4UF - 85 220 pF
VCL clamping voltage [1][2]
PESD3V3S4UF IPP=1A --8 V
IPP=10A --11 V
PESD5V0S4UF IPP=1A --8 V
IPP=10A --12 V
rdif differential resistance IR =1mA
PESD3V3S4UF - - 400 Ω
PESD5V0S4UF - - 200 Ω
NXP Semiconductors PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays
NXP Semiconductors PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays
NXP Semiconductors PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays
