PESD5V0S1BA ,Low capacitance bidirectional ESD protection diodesPESD5V0S1BA;PESD5V0S1BB;PESD5V0S1BLLow capacitance bidirectional ESD protection diodesRev. 04 — 20 ..
PESD5V0S1BB ,Low capacitance bidirectional ESD protection diodesLimiting valuesTable 6.
PESD5V0S1BB- ,Low capacitance bidirectional ESD protection diodesFeaturesn Bidirectional ESD protection of one line n ESD protection > 30 kVn Max. peak pulse power: ..
PESD5V0S1BL ,Low capacitance bidirectional ESD protection diodesPESD5V0S1BA;PESD5V0S1BB;PESD5V0S1BLLow capacitance bidirectional ESD protection diodesRev. 04 — 20 ..
PESD5V0S1BSF ,Ultra low profile bidirectional low capacitance ESD protection diodeApplications Cellular handsets and accessories Portable electronics Communication systems Compu ..
PESD5V0S1UA ,Unidirectional ESD protection for transient voltage suppressionApplicationsn Computers and peripherals n Communication systemsn Audio and video equipment n Portab ..
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PIMT1 ,PNP general purpose double transistorFEATURES PINNING• 600 mW total power dissipationPIN DESCRIPTION• Low current (max. 100 mA)1, 4 emit ..
PIMT1 ,PNP general purpose double transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PESD5V0S1BA-PESD5V0S1BB-PESD5V0S1BB--PESD5V0S1BL
Low capacitance bidirectional ESD protection diodes
Product profile1.1 General descriptionLow capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMD
plastic packages designedto protect one signal line from the damage causedby ESD and
other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESD5V0S1BA; PESD5V0S1BB;
PESD5V0S1BL
Low capacitance bidirectional ESD protection diodes
Rev. 04 — 20 August 2009 Product data sheet
Table 1. Product overviewPESD5V0S1BA SOD323 SC-76
PESD5V0S1BB SOD523 SC-79
PESD5V0S1BL SOD882 - Bidirectional ESD protection of one line n ESD protection > 30 kV Max. peak pulse power: PPP = 130 W n IEC 61000-4-2, level 4 (ESD) Low clamping voltage: V(CL)R = 14 V n IEC 61000-4-5 (surge); IPP = 12 A Ultra low leakage current: IRM = 5 nA n Ultra small SMD plastic packages Cellular handsets and accessories n Communication systems Portable electronics n Audio and video equipment Computers and peripherals
Table 2. Quick reference dataVRWM reverse stand-off voltage - - 5 V diode capacitance VR = 0 V;
f = 1 MHz 3545pF
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes Pinning information Ordering information Marking
Table 3. Pinning
SOD323, SOD523 cathode 1 cathode 2
SOD882 cathode 1 cathode 2
001aab540
sym0451
Transparent
top view
sym0451
Table 4. Ordering informationPESD5V0S1BA SC-76 plastic surface mounted package; 2 leads SOD323
PESD5V0S1BB SC-79 plastic surface mounted package; 2 leads SOD523
PESD5V0S1BL - leadless ultra small plastic package; 2 terminals;
body 1.0 × 0.6 × 0.5 mm
SOD882
Table 5. Marking codesPESD5V0S1BA E6
PESD5V0S1BB L7
PESD5V0S1BL F1
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes Limiting values[1] Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC61000-4-5; see
Figure1.
[2] Measured from pin 1 to pin 2.
[1] Measured from pin 1 to pin 2.
[2] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure2.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per diodePPP peak pulse power 8/20μs [1][2]- 130 W
IPP peak pulse current 8/20μs [1][2] -12 A junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. ESD maximum ratingsESD electrostatic discharge
capability
IEC 61000-4-2 (contact
discharge)
[1][2] -30 kV
HBM MIL-Std 883 - 10 kV
Table 8. ESD standards complianceIEC 61000-4-2, level 4 (ESD); Figure2 > 15 kV (air); > 8 kV (contact)
HBM MIL-STD 883; class 3 > 4 kV
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes Characteristics[1] Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC61000-4-5; see Figure1.
[2] Measures from pin 1 to pin 2.
Table 9. CharacteristicsTamb = 25 °C unless otherwise specified
Per diodeVRWM reverse stand-off voltage - - 5 V
IRM reverse leakage current VRWM = 5 V;
see Figure6 5 100 nA
V(CL)R clamping voltage IPP = 1 A [1][2] --10 V
IPP = 12 A [1][2] --14 V
V(BR) breakdown voltage IR = 1 mA 5.5 - 9.5 V
rdif differential resistance IR = 1 mA - - 50 Ω diode capacitance VR = 0 V; f = 1 MHz;
see Figure5 3545pF
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
NXP Semiconductors PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes Application informationPESD5V0S1Bx series is designed for the protection of one bidirectional signal line from
the damage causedby ElectroStatic Discharge (ESD) and surge pulses. The devices may
be used on lines where the signal polarities are above and below ground. They provide a
surge capability of up to 130 W per line for a 8/20 μs waveform.
Circuit board layout and protection device placement:Circuit board layout is critical for the suppression of ESD, EFT and surge transients.
The following guidelines are recommended: Place the protection device as close to the input terminal or connector as possible. The path length between the protection device and the protected line should be
minimized. Keep parallel signal paths to a minimum. Avoid running protection conductors in parallel with unprotected conductor. Minimize all printed-circuit board conductive loops including power and ground loops. Minimize the length of the transient return path to ground. Avoid using shared transient return paths to a common ground point. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
