PESD5V0L6US ,Low capacitance 6-fold ESD protection diode arraysApplications■ Computers and peripherals ■ High speed data lines■ Communication systems ■ Parallel p ..
PESD5V0S1BA ,Low capacitance bidirectional ESD protection diodesPESD5V0S1BA;PESD5V0S1BB;PESD5V0S1BLLow capacitance bidirectional ESD protection diodesRev. 04 — 20 ..
PESD5V0S1BB ,Low capacitance bidirectional ESD protection diodesLimiting valuesTable 6.
PESD5V0S1BB- ,Low capacitance bidirectional ESD protection diodesFeaturesn Bidirectional ESD protection of one line n ESD protection > 30 kVn Max. peak pulse power: ..
PESD5V0S1BL ,Low capacitance bidirectional ESD protection diodesPESD5V0S1BA;PESD5V0S1BB;PESD5V0S1BLLow capacitance bidirectional ESD protection diodesRev. 04 — 20 ..
PESD5V0S1BSF ,Ultra low profile bidirectional low capacitance ESD protection diodeApplications Cellular handsets and accessories Portable electronics Communication systems Compu ..
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PIMT1 ,PNP general purpose double transistorFEATURES PINNING• 600 mW total power dissipationPIN DESCRIPTION• Low current (max. 100 mA)1, 4 emit ..
PIMT1 ,PNP general purpose double transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
Product profile1.1 General descriptionLow capacitance 6-fold ESD protection diode arraysin small plastic packages designedto
protect up to six transmission or data lines from the damage caused by ElectroStatic
Discharge (ESD) and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESD5V0L6UAS;
PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
Table 1: Product overviewPESD5V0L6UAS TSSOP8 SOT505-1
PESD5V0L6US SO8 SOT96-1 ESD protection of up to six lines � Ultra low leakage current: IRM = 8 nA Low diode capacitance � ESD protection of up to 20 kV Max. peak pulse power: PPP = 35 W � IEC 61000-4-2, level 4 (ESD) Low clamping voltage: V(CL)R = 15 V � IEC 61000-4-5 (surge); IPP = 2.5 A. Computers and peripherals � High speed data lines Communication systems � Parallel ports. Audio and video equipment
Table 2: Quick reference dataVRWM reverse stand-off voltage - - 5 V diode capacitance VR = 0 V;
f=1MHz 1619pF
Philips Semiconductors PESD5V0L6UAS; PESD5V0L6US Pinning information Ordering information Marking
Table 3: Discrete pinning
TSSOP8 cathode 1 cathode 2 cathode 3 cathode 4 cathode 5 common anode common anode cathode 6
SO8 cathode 1 cathode 2 cathode 3 cathode 4 cathode 5 common anode common anode cathode 6
sym004
sym004
Table 4: Ordering informationPESD5V0L6UAS TSSOP8 plastic thin shrink small outline package; 8 leads;
body width 3 mm
SOT505-1
PESD5V0L6US SO8 plastic small outline package; 8 leads;
body width 3.9 mm
SOT96-1
Table 5: MarkingPESD5V0L6UAS 5V06U
PESD5V0L6US 5V06US
Philips Semiconductors PESD5V0L6UAS; PESD5V0L6US Limiting values[1] Non-repetitive current pulse 8/20 μs exponentially decay waveform according to IEC 61000-4-5;
see Figure1.
[2] Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure2.
[2] Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
Table 6: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per diodePPP peak pulse power 8/20 μs pulse [1][2] -35 W
IPP peak pulse current 8/20 μs pulse [1][2]- 2.5 A junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7: ESD maximum ratingsESD electrostatic discharge
capability
IEC 61000-4-2
(contact discharge)
[1][2] -20 kV
HBM MIL-STD883 - 10 kV
Table 8: ESD standards complianceIEC 61000-4-2, level 4 (ESD); see Figure2 >15 kV (air); > 8 kV (contact)
HBM MIL-STD883, class 3 >4kV
Philips Semiconductors PESD5V0L6UAS; PESD5V0L6US
Philips Semiconductors PESD5V0L6UAS; PESD5V0L6US Characteristics[1] Non-repetitive current pulse 8/20 μs exponentially decay waveform according to IEC 61000-4-5; see Figure1.
[2] Measured between each cathode on pins 1, 2, 3, 4, 5 or 8 and anode on pin 6 or 7.
Table 9: CharacteristicsTamb = 25 °C unless otherwise specified.
Per diodeVRWM reverse stand-off voltage - - 5 V
IRM reverse leakage current VRWM = 5 V - 8 25 nA
V(CL)R clamping voltage IPP = 1 A [1][2] --10 V
IPP = 2.5 A [1][2] --15 V
V(BR) breakdown voltage IR = 1 mA 6.4 6.8 7.2 V
rdif differential resistance IR = 1 mA - - 100 Ω diode capacitance VR = 0 V; f = 1 MHz;
see Figure5 1619pF
Philips Semiconductors PESD5V0L6UAS; PESD5V0L6US
Philips Semiconductors PESD5V0L6UAS; PESD5V0L6US
