PESD5V0L4UW ,Low capacitance unidirectional quadruple ESD protection diode arraysLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PESD5V0L5UF ,Low capacitance unidirectional fivefold ESD protection diode arraysGeneral descriptionLow capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection ..
PESD5V0L5UV ,Low capacitance 5-fold ESD protection diode arrays in SOT666 packageFeaturesn ESD protection of up to five lines n Ultra low leakage current: I =5nARMn Low diode capaci ..
PESD5V0L5UY ,Low capacitance 5-fold ESD protection diode arrays in SOT363 packageGeneral descriptionLow capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection ..
PESD5V0L6US ,Low capacitance 6-fold ESD protection diode arraysApplications■ Computers and peripherals ■ High speed data lines■ Communication systems ■ Parallel p ..
PESD5V0S1BA ,Low capacitance bidirectional ESD protection diodesPESD5V0S1BA;PESD5V0S1BB;PESD5V0S1BLLow capacitance bidirectional ESD protection diodesRev. 04 — 20 ..
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PIMT1 ,PNP general purpose double transistorFEATURES PINNING• 600 mW total power dissipationPIN DESCRIPTION• Low current (max. 100 mA)1, 4 emit ..
PIMT1 ,PNP general purpose double transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PESD5V0L4UW
Low capacitance quadruple ESD protection array
Philips Semiconductors Product specification
Low capacitance quadruple ESD
protection array PESDxL4UW series
FEATURES Uni-directional ESD protection of four lines or
bi-directional ESD protection of 3 lines Reverse standoff voltage: 3.3 and5V Low diode capacitance Ultra low leakage current Ultra small SOT665 surface mount package ESD protection >20kV IEC 61000-4-2; level4 (ESD); 15 kV (air) orkV (contact).
APPLICATIONS Cellular handsets and accessories Portable electronics Computers and peripherals Communication systems Audio and video equipment.
MARKING
DESCRIPTIONLow capacitance quadruple ESD protection arrayina five
pad SOT665 ultra small plastic package designed to
protect up to four transmission or data lines from
ElectroStatic Discharge (ESD) damage.
PINNING
ORDERING INFORMATION
Philips Semiconductors Product specification
Low capacitance quadruple ESD
protection array PESDxL4UW series
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Non-repetitive current pulse 8/20 μs exponentially decaying waveform see Fig.5. Pins 1, 3, 4 or 5to pin 2. Device mounted on standard printed-circuit board.
ESD standards compliance
THERMAL CHARACTERISTICS
Notes Solder point of common anode (pin2).
Philips Semiconductors Product specification
Low capacitance quadruple ESD
protection array PESDxL4UW series
ELECTRICAL CHARACTERISTICS =25 °C unless otherwise specified.
Notes Pins 1, 3, 4 or 5to pin 2.
Philips Semiconductors Product specification
Low capacitance quadruple ESD
protection array PESDxL4UW series
Philips Semiconductors Product specification
Low capacitance quadruple ESD
protection array PESDxL4UW series
