PESD5V0L1BSF ,Ultra low profile bidirectional low capacitance ESD protection diodeApplications Cellular handsets and accessories Portable electronics Communication systems Compu ..
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PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
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PIMT1 ,PNP general purpose double transistorFEATURES PINNING• 600 mW total power dissipationPIN DESCRIPTION• Low current (max. 100 mA)1, 4 emit ..
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PESD5V0L1BSF
Ultra low profile bidirectional low capacitance ESD protection diode
1. Product profile
1.1 General descriptionLow capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to
protect one signal line from the damage caused by ESD and other transients.
1.2 Features and benefits Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen
and antimony (Dark Green compliant) Bidirectional ESD protection of one line Low diode capacitance Cd =12pF ESD protection up to ±30 kV according to IEC 61000-4-2 Ultra small SMD package Symmetrical breakdown voltage
1.3 Applications Cellular handsets and accessories Portable electronics Communication systems Computers and peripherals
1.4 Quick reference data[1] This parameter is guaranteed by design.
PESD5V0L1BSF
Ultra low profile bidirectional low capacitance
ESD protection diode
Rev. 1 — 18 February 2011 Product data sheet
Table 1. Quick reference dataTamb =25 °C unless otherwise specified.
VRWM reverse standoff voltage −5- 5 V diode capacitance f=1 MHz; VR =0V [1] 912 15.4 pF
NXP Semiconductors PESD5V0L1BSF
Bidirectional low capacitance ESD protection diode
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values[1] Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC 61000-4-5;
see Figure1.
[2] Measured from pin 1 to pin2.
Table 2. Pinning cathode (diode1) cathode (diode2)
Transparent
top view
sym0451
Table 3. Ordering informationPESD5V0L1BSF- leadless ultra small package; 2 terminals;
body 0.6×0.3× 0.3 mm
SOD962
Table 4. Marking codesPESD5V0L1BSF none
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
PPP peak pulse power tp =8/20μs [1][2] -35 W
IPP peak pulse current tp =8/20μs [1][2] -3 A junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PESD5V0L1BSF
Bidirectional low capacitance ESD protection diode[1] Measured from pin 1 to pin2.
[2] Device stressed with ten non-repetitive ESD pulses; see Figure2.
Table 6. ESD maximum ratingsVESD electrostatic
discharge voltage
IEC 61000-4-2
(contact discharge)
[1][2] -30 kV
IEC 61000-4-2
(air discharge)
-30 kV
MIL-STD-883 (human
body model)
-30 kV
Table 7. ESD standards complianceIEC 61000-4-2, level 4 (ESD) >15kV (air); >8kV (contact)
MIL-STD-883; class 3 (human body model) >4kV
NXP Semiconductors PESD5V0L1BSF
Bidirectional low capacitance ESD protection diode
6. Characteristics[1] Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC 61000-4-5;
see Figure1.
[2] Measured from pin 1 to pin2.
[3] Breakdown voltage is always symmetrical within the characterized range, which means no difference in
breakdown voltage from pin1topin 2 and vice versa.
[4] This parameter is guaranteed by design.
[5] Calculated from S-parameter values.
[6] Non-repetitive current pulse, Transmission Line Pulse (TLP)tp= 100 ns; square pulse;
ANS/IESD STM5.1-2008.
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
Per diodeVRWM reverse standoff
voltage −5- 5 V
IRM reverse leakage
current
VRWM=5V - 1 100 nA
VCL clamping voltage IPP =1A [1][2] -- 11.5 V
IPP =3A [1][2] -- 13.5 V
VBR breakdown voltage IR =1mA [3] 6- 10 V= −1mA [3] −10 - −6V diode capacitance f=1 MHz [4]=0V 9 12 15.4 pF =2.5V - 8.9 11.4 pF =5V - 8 10.2 pF series inductance [5] -0.05 - nH
Rdyn dynamic resistance [6] -1 - Ω
NXP Semiconductors PESD5V0L1BSF
Bidirectional low capacitance ESD protection diodeNXP Semiconductors PESD5V0L1BSF
Bidirectional low capacitance ESD protection diode
NXP Semiconductors PESD5V0L1BSF
Bidirectional low capacitance ESD protection diode
7. Application informationThe PESD5V0L1BSF is designed for the protection of one data or signal line from the
damage caused by ESD and/or other surge pulses. The device may be used on lines
where the signal polarities are both, positive and negative with respect to ground. provides protection against surges with up to 35 W per line.
Circuit board layout and protection device placementCircuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended: Place the device as close to the input terminal or connector as possible The path length between the device and the protected line should be minimized Avoid running protected conductors in parallel with unprotected conductors Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops Minimize the length of the transient return path to ground Avoid using shared transient return paths to a common ground point Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
