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PIP202-12M ,DC to DC converter powertrain
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PIP3101-A ,Logic level TOPFET
PIP3101-A ,Logic level TOPFET
PESD3V3V4UG-PESD3V3V4UW-PESD5V0V4UF-PESD5V0V4UG-PESD5V0V4UW
Very low capacitance unidirectional quadruple ESD protection diode arrays
Product profile1.1 General descriptionVery low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection
diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to
protect up to four signal lines from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
PESDxV4UF; PESDxV4UG;
PESDxV4UW
Very low capacitance unidirectional quadruple ESD
protection diode arrays
Rev. 03 — 28 January 2008 Product data sheet
Table 1. Product overviewPESD3V3V4UF SOT886 - MO-252 leadless ultra small
PESD5V0V4UF SOT886 - MO-252 leadless ultra small
PESD3V3V4UG SOT353 SC-88A - very small
PESD5V0V4UG SOT353 SC-88A - very small
PESD3V3V4UW SOT665 - - ultra small and flat lead
PESD5V0V4UW SOT665 - - ultra small and flat lead ESD protection of up to four lines n Ultra low leakage current: IRM =25nA Very low diode capacitance n ESD protection up to12 kV Max. peak pulse power: PPP =16W n IEC 61000-4-2; level 4 (ESD) Low clamping voltage: VCL =11V n IEC 61000-4-5 (surge); IPP= 1.5A Computers and peripherals n Communication systems Audio and video equipment n Portable electronics Cellular handsets and accessories n Subscriber Identity Module (SIM) card
protection
NXP Semiconductors PESDxV4UF/G/W
Very low capacitance quadruple ESD protection diode arrays
1.4 Quick reference data Pinning information
Table 2. Quick reference dataTamb =25 °C unless otherwise specified.
Per diodeVRWM reverse standoff voltage
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW - 3.3 V
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW - 5.0 V diode capacitance f=1 MHz; VR =0V
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW 1518pF
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW 1215pF
Table 3. Pinning
PESD3V3V4UF; PESD5V0V4UF cathode (diode1) common anode cathode (diode2) cathode (diode3) common anode cathode (diode4)
PESD3V3V4UG; PESD5V0V4UG cathode (diode1) common anode cathode (diode2) cathode (diode3) cathode (diode4)
PESD3V3V4UW; PESD5V0V4UW cathode (diode1) common anode cathode (diode2) cathode (diode3) cathode (diode4)
bottom view
2156 006aaa156123
006aaa15713 35
006aaa15713
NXP Semiconductors PESDxV4UF/G/W
Very low capacitance quadruple ESD protection diode arrays Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Limiting values[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] For PESDxV4UF measured from pin 1, 3, 4 or 6 to pin 2 or5.
[3] For PESDxV4UG and PESDxV4UW measured from pin 1, 3, 4 or 5 to pin2.
Table 4. Ordering informationPESD3V3V4UF XSON6 plastic extremely thin small outline package; leads; 6 terminals; body 1× 1.45× 0.5 mm
SOT886
PESD5V0V4UF
PESD3V3V4UG SC-88A plastic surface-mounted package; 5 leads SOT353
PESD5V0V4UG
PESD3V3V4UW- plastic surface-mounted package; 5 leads SOT665
PESD5V0V4UW
Table 5. Marking codesPESD3V3V4UF A7
PESD5V0V4UF A8
PESD3V3V4UG V1*
PESD5V0V4UG V2*
PESD3V3V4UW W1
PESD5V0V4UW W2
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per diodePPP peak pulse power tp= 8/20μs [1][2][3] -16 W
IPP peak pulse current tp= 8/20μs [1][2][3]- 1.5 A
Per device junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PESDxV4UF/G/W
Very low capacitance quadruple ESD protection diode arrays[1] Device stressed with ten non-repetitive ESD pulses.
[2] For PESDxV4UF measured from pin 1, 3, 4 or 6 to pin 2 or5.
[3] For PESDxV4UG and PESDxV4UW measured from pin 1, 3, 4 or 5 to pin2.
Table 7. ESD maximum ratingsTamb =25 °C unless otherwise specified.
Per diodeVESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2][3] -12 kV
MIL-STD-883 (human
body model)
-10 kV
Table 8. ESD standards compliance
Per diodeIEC 61000-4-2; level 4 (ESD) >8kV (contact)
MIL-STD-883; class 3 (human body model) >4kV
NXP Semiconductors PESDxV4UF/G/W
Very low capacitance quadruple ESD protection diode arrays Characteristics
Table 9. CharacteristicsTamb =25 °C unless otherwise specified.
Per diodeVRWM reverse standoff voltage
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW - 3.3 V
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW - 5.0 V
IRM reverse leakage current
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
VRWM= 3.3V - 40 300 nA
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
VRWM= 5.0V - 3 25 nA
VBR breakdown voltage IR =1mA
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
5.3 5.6 5.9 V
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
6.4 6.8 7.2 V diode capacitance f=1MHz
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW=0V - 15 18 pF
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW= 3.3V - 9 12 pF
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW=0V - 12 15 pF
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW=5V - 69pF
NXP Semiconductors PESDxV4UF/G/W
Very low capacitance quadruple ESD protection diode arrays[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] For PESDxV4UF measured from pin 1, 3, 4 or 6 to pin 2 or5.
[3] For PESDxV4UG and PESDxV4UW measured from pin 1, 3, 4 or 5 to pin2.
VCL clamping voltage [1][2][3]
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
IPP=1A --9 V
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
IPP=2A --11 V
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
IPP=1A --11 V
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
IPP= 1.7A - - 13 V
rdif differential resistance IR =1mA
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW - 200 Ω
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW - 100 Ω
Table 9. Characteristics …continuedTamb =25 °C unless otherwise specified.
NXP Semiconductors PESDxV4UF/G/W
Very low capacitance quadruple ESD protection diode arrays
NXP Semiconductors PESDxV4UF/G/W
Very low capacitance quadruple ESD protection diode arrays
