PESD3V3U1UB ,Ultra low capacitance unidirectional ESD protection diodesApplicationsn USB interfaces n Cellular handsets and accessoriesn 10/100/1000 Mbit/s Ethernet n Por ..
PESD3V3U1UT ,Ultra low capacitance ESD protection diode in SOT23 packageLimiting valuesTable 5.
PESD3V3V4UG ,Very low capacitance unidirectional quadruple ESD protection diode arraysPESDxV4UF; PESDxV4UG;PESDxV4UWVery low capacitance unidirectional quadruple ESDprotection diode arr ..
PESD3V3V4UW ,Very low capacitance unidirectional quadruple ESD protection diode arraysLimiting valuesTable 6.
PESD5V0F1BL ,Femtofarad bidirectional ESD protection diodeGeneral descriptionFemtofarad bidirectional ElectroStatic Discharge (ESD) protection diode in a lea ..
PESD5V0F1BL ,Femtofarad bidirectional ESD protection diodeApplications 10/100/1000 Mbit/s Ethernet Portable electronics FireWire Communication systems ..
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PIMT1 ,PNP general purpose double transistorFEATURES PINNING• 600 mW total power dissipationPIN DESCRIPTION• Low current (max. 100 mA)1, 4 emit ..
PIMT1 ,PNP general purpose double transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PESD3V3U1UB
Ultra low capacitance unidirectional ESD protection diodes
Product profile1.1 General descriptionUltra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESD3V3U1UA;
PESD3V3U1UB; PESD3V3U1UL
Ultra low capacitance unidirectional ESD protection diodes
Rev. 01 — 30 October 2008 Product data sheet
Table 1. Product overviewPESD3V3U1UA SOD323 SC-76 very small
PESD3V3U1UB SOD523 SC-79 ultra small and flat lead
PESD3V3U1UL SOD882 - leadless ultra small Unidirectional ESD protectionof one linen ESD protection up to9kV Ultra low diode capacitance:Cd= 2.6pFn IEC 61000-4-2; level 4 (ESD) Very low leakage current: IRM =1nA n AEC-Q101 qualified USB interfaces n Cellular handsets and accessories 10/100/1000 Mbit/s Ethernet n Portable electronics FireWire n Communication systems High-speed data lines n Computers and peripherals Subscriber Identity Module (SIM) card
protection Audio and video equipment
Table 2. Quick reference dataTamb =25 °C unless otherwise specified.
VRWM reverse standoff voltage - - 3.3 V diode capacitance f=1 MHz; VR=0V - 2.6 3.1 pF
NXP Semiconductors PESD3V3U1UA/UB/UL
Ultra low capacitance unidirectional ESD protection diodes Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking
Table 3. Pinning
PESD3V3U1UA; PESD3V3U1UB cathode [1] anode
PESD3V3U1UL cathode [1] anode
001aab540
006aaa1521
Transparent
top view
006aaa1521
Table 4. Ordering informationPESD3V3U1UA SC-76 plastic surface-mounted package; 2 leads SOD323
PESD3V3U1UB SC-79 plastic surface-mounted package; 2 leads SOD523
PESD3V3U1UL - leadless ultra small plastic package; 2 terminals;
body 1.0× 0.6× 0.5 mm
SOD882
Table 5. Marking codesPESD3V3U1UA QT
PESD3V3U1UB T8
PESD3V3U1UL XZ
NXP Semiconductors PESD3V3U1UA/UB/UL
Ultra low capacitance unidirectional ESD protection diodes Limiting values[1] Device stressed with ten non-repetitive ESD pulses.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. ESD maximum ratingsTamb =25 °C unless otherwise specified.
VESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1] -9 kV
MIL-STD-883 (human
body model)
-10 kV
Table 8. ESD standards complianceIEC 61000-4-2; level 4 (ESD) >8kV (contact)
MIL-STD-883; class 3 (human body model) >4kV
NXP Semiconductors PESD3V3U1UA/UB/UL
Ultra low capacitance unidirectional ESD protection diodes Characteristics
Table 9. CharacteristicsTamb =25 °C unless otherwise specified.
VRWM reverse standoff voltage - - 3.3 V
IRM reverse leakage current VRWM=3V - 1 100 nA
VBR breakdown voltage IR=5 mA 4.5 5.6 6.8 V diode capacitance f=1 MHz; VR=0V - 2.6 3.1 pF
rdif differential resistance IR=5 mA - - 100 Ω
NXP Semiconductors PESD3V3U1UA/UB/UL
Ultra low capacitance unidirectional ESD protection diodes
NXP Semiconductors PESD3V3U1UA/UB/UL
Ultra low capacitance unidirectional ESD protection diodes Application informationThe PESD3V3U1Ux series is designed for the protection of one unidirectional data or
signal line from the damage causedby ESD. The devices maybe usedon lines where the
signal polarities are either positive or negative with respect to ground.
Circuit board layout and protection device placementCircuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended: Place the device as close to the input terminal or connector as possible. The path length between the device and the protected line should be minimized. Keep parallel signal paths to a minimum. Avoid running protected conductors in parallel with unprotected conductors. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops. Minimize the length of the transient return path to ground. Avoid using shared transient return paths to a common ground point. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
Test information
8.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
