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PESD3V3L5UVNXPN/a2avaiLow capacitance unidirectional fivefold ESD protection diode arrays
PESD3V3L5UYNXPN/a18350avaiLow capacitance unidirectional fivefold ESD protection diode arrays
PESD5V0L5UFNXPN/a20000avaiLow capacitance unidirectional fivefold ESD protection diode arrays
PESD5V0L5UVNXPN/a40000avaiLow capacitance 5-fold ESD protection diode arrays in SOT666 package
PESD5V0L5UYNXPN/a2981avaiLow capacitance 5-fold ESD protection diode arrays in SOT363 package


PESD5V0L5UV ,Low capacitance 5-fold ESD protection diode arrays in SOT666 packageFeaturesn ESD protection of up to five lines n Ultra low leakage current: I =5nARMn Low diode capaci ..
PESD5V0L5UY ,Low capacitance 5-fold ESD protection diode arrays in SOT363 packageGeneral descriptionLow capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection ..
PESD5V0L6US ,Low capacitance 6-fold ESD protection diode arraysApplications■ Computers and peripherals ■ High speed data lines■ Communication systems ■ Parallel p ..
PESD5V0S1BA ,Low capacitance bidirectional ESD protection diodesPESD5V0S1BA;PESD5V0S1BB;PESD5V0S1BLLow capacitance bidirectional ESD protection diodesRev. 04 — 20 ..
PESD5V0S1BB ,Low capacitance bidirectional ESD protection diodesLimiting valuesTable 6.
PESD5V0S1BB- ,Low capacitance bidirectional ESD protection diodesFeaturesn Bidirectional ESD protection of one line n ESD protection > 30 kVn Max. peak pulse power: ..
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits  100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PIMT1 ,PNP general purpose double transistorFEATURES PINNING• 600 mW total power dissipationPIN DESCRIPTION• Low current (max. 100 mA)1, 4 emit ..
PIMT1 ,PNP general purpose double transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..


PESD3V3L5UV-PESD3V3L5UY-PESD5V0L5UF-PESD5V0L5UV-PESD5V0L5UY
Low capacitance unidirectional fivefold ESD protection diode arrays
Product profile1.1 General description
Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode
arraysin small Surface-Mounted Device (SMD) plastic packages designedto protectupto
five unidirectional signal lines from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
PESDxL5UF; PESDxL5UV;
PESDxL5UY
Low capacitance unidirectional fivefold ESD protection diode
arrays
Rev. 02 — 8 January 2008 Product data sheet
Table 1. Product overview

PESD3V3L5UF SOT886 - MO-252 leadless ultra small
PESD5V0L5UF SOT886 - MO-252 leadless ultra small
PESD3V3L5UV SOT666 - - ultra small and flat lead
PESD5V0L5UV SOT666 - - ultra small and flat lead
PESD3V3L5UY SOT363 SC-88 - very small
PESD5V0L5UY SOT363 SC-88 - very small ESD protection of up to five lines n Ultra low leakage current: IRM =5nA Low diode capacitance n ESD protection up to20 kV Max. peak pulse power: PPP =25W n IEC 61000-4-2; level 4 (ESD) Low clamping voltage: VCL =12V n IEC 61000-4-5 (surge); IPP= 2.5A Computers and peripherals n Communication systems Audio and video equipment n Portable electronics Cellular handsets and accessories n Subscriber Identity Module (SIM) card
protection
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
1.4 Quick reference data Pinning information
Table 2. Quick reference data

Tamb =25 °C unless otherwise specified.
Per diode

VRWM reverse standoff voltage
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY - 3.3 V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY - 5.0 V diode capacitance f=1 MHz; VR =0V
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY 2228pF
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY 1619pF
Table 3. Pinning
PESD3V3L5UF; PESD5V0L5UF
cathode (diode1) common anode cathode (diode2) cathode (diode3) cathode (diode4) cathode (diode5)
PESD3V3L5UV; PESD5V0L5UV
cathode (diode1) common anode cathode (diode2) cathode (diode3) cathode (diode4) cathode (diode5)
bottom view2156123
006aaa159 356 6123
006aaa159
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays Ordering information Marking

[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PESD3V3L5UY; PESD5V0L5UY
cathode (diode1) common anode cathode (diode2) cathode (diode3) cathode (diode4) cathode (diode5)
Table 3. Pinning …continued
6123
006aaa159
Table 4. Ordering information

PESD3V3L5UF XSON6 plastic extremely thin small outline package; leads; 6 terminals; body 1× 1.45× 0.5 mm
SOT886
PESD5V0L5UF
PESD3V3L5UV - plastic surface-mounted package; 6 leads SOT666
PESD5V0L5UV
PESD3V3L5UY SC-88 plastic surface-mounted package; 6 leads SOT363
PESD5V0L5UY
Table 5. Marking codes

PESD3V3L5UF A1
PESD5V0L5UF A2
PESD3V3L5UV E1
PESD5V0L5UV E2
PESD3V3L5UY K3*
PESD5V0L5UY K4*
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays Limiting values

[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4, 5 or 6 to pin2.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1, 3, 4, 5 or 6 to pin2.
Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).
Per diode

PPP peak pulse power tp= 8/20μs [1][2] -25 W
IPP peak pulse current tp= 8/20μs [1][2]- 2.5 A
Per device
junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. ESD maximum ratings

Tamb =25 °C unless otherwise specified.
Per diode

VESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2] -20 kV
MIL-STD-883 (human
body model)
-10 kV
Table 8. ESD standards compliance
Per diode

IEC 61000-4-2; level 4 (ESD) >15kV (air); >8kV (contact)
MIL-STD-883; class 3 (human body model) >4kV
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays Characteristics
Table 9. Characteristics

Tamb =25 °C unless otherwise specified.
Per diode

VRWM reverse standoff voltage
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY - 3.3 V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY - 5.0 V
IRM reverse leakage current
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
VRWM= 3.3V - 75 300 nA
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
VRWM= 5.0V - 5 25 nA
VBR breakdown voltage IR =1mA
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
5.3 5.6 5.9 V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
6.4 6.8 7.2 V
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays

[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4, 5 or 6 to pin2. diode capacitance f=1 MHz; =0V
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY 2228pF
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY 1619pF
VCL clamping voltage [1][2]
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
IPP=1A --10 V
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
IPP= 2.5A - - 12 V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
IPP=1A --10 V
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
IPP= 2.5A - - 12 V
rdif differential resistance IR =1mA
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY - 200 Ω
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY - 100 Ω
Table 9. Characteristics …continued

Tamb =25 °C unless otherwise specified.
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
NXP Semiconductors PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
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