PESD5V0L2UM ,Low capacitance double ESD protection diode
PESD5V0L2UM ,Low capacitance double ESD protection diodeLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PESD5V0L4UG ,Low capacitance unidirectional quadruple ESD protection diode arraysPESDxL4UF; PESDxL4UG;PESDxL4UWLow capacitance unidirectional quadruple ESD protectiondiode arraysRe ..
PESD5V0L4UW ,Low capacitance unidirectional quadruple ESD protection diode arraysLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PESD5V0L5UF ,Low capacitance unidirectional fivefold ESD protection diode arraysGeneral descriptionLow capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection ..
PESD5V0L5UV ,Low capacitance 5-fold ESD protection diode arrays in SOT666 packageFeaturesn ESD protection of up to five lines n Ultra low leakage current: I =5nARMn Low diode capaci ..
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PIMT1 ,PNP general purpose double transistorFEATURES PINNING• 600 mW total power dissipationPIN DESCRIPTION• Low current (max. 100 mA)1, 4 emit ..
PIMT1 ,PNP general purpose double transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PESD3V3L2UM-PESD5V0L2UM
Low capacitance double ESD protection diode
NXP Semiconductors Product data sheet
Low capacitance double ESD protection
diode PESDxL2UM series
FEATURES Uni-directional ESD protection of two lines or
bi-directional ESD protection of one line Reverse standoff voltage 3.3 and 5 V Low diode capacitance Ultra low leakage current Leadless ultra small SOT883 surface mount package
(1 × 0.6 × 0.5 mm) Board space 1.17 mm2 (approx. 10% of SOT23) ESD protection >15 kV IEC 61000-4-2; level 4 (ESD); 15 kV (air) or
8 kV (contact).
APPLICATIONS Cellular handsets and accessories Portable electronics Computers and peripherals Communication systems Audio and video equipment.
MARKING
DESCRIPTIONLow capacitance ESD protection diode in a three pad
SOT883 leadless ultra small plastic package designed to
protect up to two transmission or data lines from
ElectroStatic Discharge (ESD) damage.
PINNING
NXP Semiconductors Product data sheet
Low capacitance double ESD protection
diode PESDxL2UM series
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5. Pins 1 and 3 or 2 and 3. Pins 1 and 2. Device mounted on standard printed-circuit board.
ESD standards compliance
THERMAL CHARACTERISTICS
Notes Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line. FR4 single-sided copper 1 cm2.
NXP Semiconductors Product data sheet
Low capacitance double ESD protection
diode PESDxL2UM series
ELECTRICAL CHARACTERISTICSTj = 25 °C unless otherwise specified.
Notes Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5. Pins 1 and 3 or 2 and 3. Pins 1 and 2.
NXP Semiconductors Product data sheet
Low capacitance double ESD protection
diode PESDxL2UM series
NXP Semiconductors Product data sheet
Low capacitance double ESD protection
diode PESDxL2UM series
