PESD3V3L1UB ,Low capacitance unidirectional ESD protection diodesLimiting valuesTable 6.
PESD3V3L1UL ,Low capacitance unidirectional ESD protection diodesPESD3V3L1UA; PESD3V3L1UB;PESD3V3L1ULLow capacitance unidirectional ESD protection diodesRev. 01 — 1 ..
PESD3V3L2BT ,Low capacitance double bidirectional ESD protection diodes in SOT23Limiting valuesTable 5.
PESD3V3L2UM ,Low capacitance double ESD protection diodeFEATURES DESCRIPTION• Uni-directional ESD protection of two lines or Low capacitance ESD protection ..
PESD3V3L4UG ,PESDxL4UG series; Low capacitance quadruple ESD protection diode array in SOT353 packageGeneral descriptionLow capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protectio ..
PESD3V3L4UW ,Low capacitance quadruple ESD protection arrayFeaturesn ESD protection of up to four lines n Ultra low leakage current: I =5nARMn Low diode capac ..
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PIMT1 ,PNP general purpose double transistorFEATURES PINNING• 600 mW total power dissipationPIN DESCRIPTION• Low current (max. 100 mA)1, 4 emit ..
PIMT1 ,PNP general purpose double transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PESD3V3L1UA-PESD3V3L1UB-PESD3V3L1UL
Low capacitance unidirectional ESD protection diodes
Product profile1.1 General descriptionLow capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in small
Surface-Mounted Device (SMD) plastic packages designedto protect one signal line from
the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESD3V3L1UA; PESD3V3L1UB;
PESD3V3L1UL
Low capacitance unidirectional ESD protection diodes
Rev. 01 — 17 June 2009 Product data sheet
Table 1. Product overviewPESD3V3L1UA SOD323 SC-76 very small
PESD3V3L1UB SOD523 SC-79 ultra small and flat lead
PESD3V3L1UL SOD882 - leadless ultra small Unidirectional ESD protection of
one line ESD protection up to30 kV Low diode capacitance: Cd =34pF n IEC 61000-4-2; level4 (ESD) Low clamping voltage: VCL =11V n AEC-Q101 qualified Very low leakage current: IRM= 100 nA Computers and peripherals n Subscriber Identity Module (SIM) card
protection Audio and video equipment n Portable electronics Cellular handsets and accessories n FireWire Communication systems n High-speed data lines
Table 2. Quick reference dataTamb =25 °C unless otherwise specified.
VRWM reverse standoff voltage - - 3.3 V diode capacitance f=1 MHz; VR=0V - 3440pF
NXP Semiconductors PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking
Table 3. Pinning
PESD3V3L1UA; PESD3V3L1UB cathode [1] anode
PESD3V3L1UL cathode [1] anode
001aab540
006aaa1521
Transparent
top view
006aaa1521
Table 4. Ordering informationPESD3V3L1UA SC-76 plastic surface-mounted package; 2 leads SOD323
PESD3V3L1UB SC-79 plastic surface-mounted package; 2 leads SOD523
PESD3V3L1UL - leadless ultra small plastic package; 2 terminals;
body 1.0× 0.6× 0.5 mm
SOD882
Table 5. Marking codesPESD3V3L1UA 1H
PESD3V3L1UB Z7
PESD3V3L1UL XW
NXP Semiconductors PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes Limiting values[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin1topin2.
[1] Device stressed with ten non-repetitive ESD pulses.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
PPP peak pulse power tp= 8/20μs [1][2] -45 W
IPP peak pulse current tp= 8/20μs [1][2]- 4.5 A junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. ESD maximum ratingsTamb =25 °C unless otherwise specified.
VESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1] -30 kV
machine model - 400 V
MIL-STD-883 (human
body model)
-10 kV
Table 8. ESD standards complianceIEC 61000-4-2; level4 (ESD) >15kV (air); >8kV (contact)
MIL-STD-883; class 3 (human body model) >4kV
NXP Semiconductors PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes Characteristics[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin1topin2.
Table 9. CharacteristicsTamb =25 °C unless otherwise specified.
VRWM reverse standoff voltage - - 3.3 V
IRM reverse leakage current VRWM= 3.3V - 100 300 nA
VBR breakdown voltage IR=5 mA 5.3 5.6 6.0 V diode capacitance f=1 MHz; =0V 3440pF
VCL clamping voltage [1][2]
IPP=1A --8 V
IPP= 4.5A - - 11 V
rdif differential resistance IR=5 mA --30 Ω forward voltage IF= 200 mA - - 1.2 V
NXP Semiconductors PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
NXP Semiconductors PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
NXP Semiconductors PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes Application informationThe PESD3V3L1Ux series is designed for the protection of one unidirectional data or
signal line from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The PESD3V3L1Ux series provides a surge capability up to 45 W per line for an 8/20μs
waveform.
Circuit board layout and protection device placementCircuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended: Place the device as close to the input terminal or connector as possible. The path length between the device and the protected line should be minimized. Keep parallel signal paths to a minimum. Avoid running protected conductors in parallel with unprotected conductors. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops. Minimize the length of the transient return path to ground. Avoid using shared transient return paths to a common ground point. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
Test information
8.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
