PESD2CAN ,CAN bus ESD protection diodeapplications1.4 Quick reference data Table 1. Quick reference dataSymbol Parameter Conditions Min T ..
PESD3V3L1BA ,PESDxL1BA series; Low capacitance bidirectional ESD protection diodes in SOD323Applicationsn Computers and peripherals n Data linesn Communication systems n CAN bus protectionn A ..
PESD3V3L1BA ,PESDxL1BA series; Low capacitance bidirectional ESD protection diodes in SOD323PESDxL1BA seriesLow capacitance bidirectional ESD protection diodes inSOD323Rev. 02 — 20 August 200 ..
PESD3V3L1UA ,Low capacitance unidirectional ESD protection diodesApplicationsn Computers and peripherals n Subscriber Identity Module (SIM) cardprotectionn Audio an ..
PESD3V3L1UB ,Low capacitance unidirectional ESD protection diodesLimiting valuesTable 6.
PESD3V3L1UL ,Low capacitance unidirectional ESD protection diodesPESD3V3L1UA; PESD3V3L1UB;PESD3V3L1ULLow capacitance unidirectional ESD protection diodesRev. 01 — 1 ..
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PIMT1 ,PNP general purpose double transistorFEATURES PINNING• 600 mW total power dissipationPIN DESCRIPTION• Low current (max. 100 mA)1, 4 emit ..
PIMT1 ,PNP general purpose double transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PESD2CAN
CAN bus ESD protection diode
1. Product profile
1.1 General descriptionPESD2CAN in a small SOT23 Surface-Mounted Device (SMD) plastic package designed
to protect two automotive Controller Area Network (CAN) bus lines from the damage
caused by ElectroStatic Discharge (ESD) and other transients.
1.2 Features and benefits Max. peak pulse power: PPP =230 W at tp =8/20s Low clamping voltage: VCL =41V at IPP =5A Ultra low leakage current: IRM <1nA ESD protection up to 30kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP =5A at tp =8/20s AEC-Q101 qualified
1.3 Applications CAN bus protection Automotive applications
1.4 Quick reference data
2. Pinning information
PESD2CAN
CAN bus ESD protection diode
Rev. 2 — 27 September 2012 Product data sheet
Table 1. Quick reference data
Per diodeVRWM reverse standoff voltage - - 24 V diode capacitance f=1 MHz; VR=0V - 25 30 pF
Table 2. Pinning
NXP Semiconductors PESD2CAN
CAN bus ESD protection diode
3. Ordering information
4. Marking[1] * = placeholder for manufacturing site code.
5. Limiting values[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 3 or 2 to 3.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to 3 or 2 to 3.
Table 3. Ordering informationPESD2CAN - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codesPESD2CAN 6R*
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per diodePPP peak pulse power tp =8/20s [1][2] -230 W
IPP peak pulse current tp =8/20s [1][2] -5 A
Per device junction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
Table 6. ESD maximum ratings
Per diodeVESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2] -30 kV
machine model [2]- 400 V
MIL-STD-883 (human
body model)
[1][2] -16 kV
NXP Semiconductors PESD2CAN
CAN bus ESD protection diode
Table 7. ESD standards compliance
Per diodeIEC 61000-4-2; level 4 (ESD) >15 kV (air); >8 kV (contact)
MIL-STD-883; class 3B (human body model) >8kV
NXP Semiconductors PESD2CAN
CAN bus ESD protection diode
6. Characteristics[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 3 or 2 to 3.
Table 8. CharacteristicsTamb =25 C unless otherwise specified.
Per diodeVRWM reverse standoff voltage - - 24 V
IRM reverse leakage current VRWM =24V - <1 10 nA
VBR breakdown voltage IR=1 mA 26.2 28 30.3 V diode capacitance f=1 MHz; VR=0V - 25 30 pF
VCL clamping voltage IPP =1A [1][2] -- 34 V
IPP =5A [1][2] -- 41 V
rdif differential resistance IR =1 mA - - 300
NXP Semiconductors PESD2CAN
CAN bus ESD protection diodeNXP Semiconductors PESD2CAN
CAN bus ESD protection diode
NXP Semiconductors PESD2CAN
CAN bus ESD protection diode
7. Application informationThe PESD2CAN is designed for the protection of two automotive CAN bus lines from the
damage caused by ESD and surge pulses. The PESD2CAN can be used for both,
high-speed CAN bus and fault-tolerant CAN bus protection. The PESD2CAN provides a
surge capability of up to 230 W per line for an 8/20 s waveform.
Circuit board layout and protection device placement:Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended: Place the PESD2CAN as close to the input terminal or connector as possible. Minimize the path length between the PESD2CAN and the protected line. Keep parallel signal paths to a minimum. Avoid running protection conductors in parallel with unprotected conductors. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops. Minimize the length of the transient return path to ground. Avoid using shared transient return paths to a common ground point. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
8. Test information
8.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
