PESD1FLEX ,FlexRay bus ESD protection diodeapplications1.4 Quick reference dataTable 1. Quick reference dataT =25 °C unless otherwise specified ..
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PESD1FLEX
FlexRay bus ESD protection diode
Product profile1.1 General descriptionPESD1FLEX in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package designed to protect two automotive FlexRay bus lines from the damage caused
by ElectroStatic Discharge (ESD) and other transients.
1.2 Features Due to the integrated diode structure only one small SOT23 package is needed to
protect two FlexRay bus lines Max. peak pulse power: PPP= 200 W at tp= 8/20μs Low clamping voltage: VCL=40 V at IPP =1A Ultra low leakage current: IRM <1nA Typ. diode capacitance matching: ΔCd/Cd= 0.1% ESD protection up to 23kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP=3 A at tp= 8/20μs Small SMD plastic package
1.3 Applications FlexRay bus protection Automotive applications
1.4 Quick reference data
PESD1FLEX
FlexRay bus ESD protection diode
Rev. 02 — 15 February 2008 Product data sheet
Table 1. Quick reference dataTamb =25 °C unless otherwise specified.
Per diodeVRWM reverse standoff voltage - - 24 V diode capacitance f=5 MHz; VR=0V - 1117pF
NXP Semiconductors PESD1FLEX
FlexRay bus ESD protection diode Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Limiting values[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 3 or2to3.
Table 2. Pinning cathode1 cathode2 common cathode
006aaa155
Table 3. Ordering informationPESD1FLEX - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codesPESD1FLEX ZJ*
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per diodePPP peak pulse power tp= 8/20μs [1][2]- 200 W
IPP peak pulse current tp= 8/20μs [1][2] -3 A
Per device junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PESD1FLEX
FlexRay bus ESD protection diode[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to 3 or2to3.
Table 6. ESD maximum ratings
Per diodeVESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2] -23 kV
MIL-STD-883 (human
body model)
-10 kV
Table 7. ESD standards compliance
Per diodeIEC 61000-4-2; level 4 (ESD) >15 kV (air); >8 kV (contact)
MIL-STD-883; class 3 (human body model) >4kV
NXP Semiconductors PESD1FLEX
FlexRay bus ESD protection diode Characteristics[1] ΔCdisthe differenceofthe capacitance measured betweenpin1 andpin3 andthe capacitance measured
between pin 2 and pin3.
[2] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[3] Measured from pin 1 to 3 or2to3.
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
Per diodeVRWM reverse standoff voltage - - 24 V
IRM reverse leakage current VRWM =24V - <1 50 nA
VBR breakdown voltage IR=5 mA 25.4 27.8 30.3 V diode capacitance f=5 MHz; VR=0V - 1117pF
ΔCd/Cd diode capacitance
matching
[1]=5 MHz; VR =0V - 0.1 - %=5 MHz; VR= 2.5V - 0.1 - %
VCL clamping voltage [2][3]
IPP=1A --40 V
IPP=3A --70 V
rdif differential resistance IR=1 mA - - 300 Ω
NXP Semiconductors PESD1FLEX
FlexRay bus ESD protection diode
NXP Semiconductors PESD1FLEX
FlexRay bus ESD protection diode
