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PESD1CAN
PESD1CAN; CAN bus ESD protection diode in SOT23
Product profile1.1 General descriptionPESD1CAN in small SOT23 SMD plastic package designed to protect two automotive
Control Area Network (CAN) bus lines from the damage caused by ElectroStatic
Discharge (ESD) and other transients.
1.2 Features Due to the integrated diode structure only one small SOT23 package is needed to
protect two CAN bus lines Max. peak pulse power: Ppp = 200 W at tp = 8/20μs Low clamping voltage: V(CL)R = 40 V at Ipp = 1 A Ultra low leakage current: IRM < 1 nA ESD protection of up to 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); Ipp = 3 A at tp = 8/20μs Small SMD plastic package
1.3 Applications CAN bus protection Automotive applications
1.4 Quick reference data
PESD1CAN
CAN bus ESD protection diode in SOT23
Table 1: Quick reference dataVRWM reverse stand-off voltage - - 24 V diode capacitance VR = 0V;
f=1MHz
-11 - pF
Philips Semiconductors PESD1CAN Pinning information Ordering information Marking[1] * = p: made in Hong Kong
* = t: made in Hong Kong
* = W: made in China
Limiting values[1] Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC61000-4-5; see
Figure1.
[2] Measured from pin 1 to 3 or 2 to 3.
Table 2: Pinning cathode 1 cathode 2 double cathode
SOT23
006aaa155
Table 3: Ordering informationPESD1CAN - plastic surface mounted package; 3 leads SOT23
Table 4: Marking codesPESD1CAN *AN
Table 5: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Ppp peak pulse power 8/20μs [1][2]- 200 W
Ipp peak pulse current 8/20μs [1][2] -3 A junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Philips Semiconductors PESD1CAN[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure2.
[2] Measured from pin 1 to 3 or 2 to 3.
Table 6: ESD maximum ratingsESD electrostatic discharge
capability
IEC 61000-4-2
(contact discharge)
[1][2] -23 kV
HBM MIL-STD883 - 10 kV
Table 7: ESD standards complianceIEC 61000-4-2, level 4 (ESD); see Figure2 > 15 kV (air); > 8 kV (contact)
HBM MIL-STD883, class 3 > 4 kV
Philips Semiconductors PESD1CAN Characteristics[1] Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC61000-4-5; see Figure1.
[2] Measured from pin 1 to 3 or 2 to 3.
Table 8: CharacteristicsTamb = 25 °C unless otherwise specified.
VRWM reverse stand-off voltage - - 24 V
IRM reverse leakage current VRWM = 24 V - < 1 50 nA
V(BR) breakdown voltage IR = 5 mA 25.4 27.8 30.3 V diode capacitance VR = 0 V; f = 1 MHz;
see Figure5
-11 - pF
V(CL)R clamping voltage IPP = 1 A [1][2] --40 V
IPP = 3 A [1][2] --70 V
rdif differential resistance IR = 1 mA - - 300 Ω
Philips Semiconductors PESD1CAN
Philips Semiconductors PESD1CAN
