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PESD12VS5UD-PESD15VS5UD-PESD24VS5UD-PESD5V0S5UD
Fivefold ESD protection diode arrays
Product profile1.1 General descriptionFivefold ElectroStatic Discharge (ESD) protection diode arraysina SOT457 (SC-74) small
Surface-Mounted Device (SMD) plastic package designedto protectupto five signal lines
from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESDxS5UD series
Fivefold ESD protection diode arrays
Rev. 02 — 7 December 2006 Product data sheet ESD protection of up to five lines n ESD protection up to 30 kV Max. peak pulse power: PPP= 200W n IEC 61000-4-2; level 4 (ESD) Ultra low leakage current: IRM =50pA n IEC 61000-4-5 (surge); IPP up to 20A Low clamping voltage: VCL =12V at
IPP =20A Computers and peripherals n Communication systems Audio and video equipment n Portable electronics Cellular handsets and accessories n Subscriber Identity Module (SIM) card
protection
Table 1. Quick reference data
Per diodeVRWM reverse standoff voltage
PESD3V3S5UD - - 3.3 V
PESD5V0S5UD - - 5 V
PESD12VS5UD - - 12 V
PESD15VS5UD - - 15 V
PESD24VS5UD - - 24 V
NXP Semiconductors PESDxS5UD series
Fivefold ESD protection diode arrays Pinning information Ordering information Marking diode capacitance f=1 MHz; VR =0V
PESD3V3S5UD - 215 300 pF
PESD5V0S5UD - 165 220 pF
PESD12VS5UD - 73 100 pF
PESD15VS5UD - 60 90 pF
PESD24VS5UD - 45 70 pF
Table 1. Quick reference data …continued
Table 2. Pinning cathode1 common anode cathode2 cathode3 cathode4 cathode5 6123
006aaa159
Table 3. Ordering informationPESD3V3S5UD SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
Table 4. Marking codesPESD3V3S5UD E1
PESD5V0S5UD E2
PESD12VS5UD E3
PESD15VS5UD E4
PESD24VS5UD E5
NXP Semiconductors PESDxS5UD series
Fivefold ESD protection diode arrays Limiting values[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4, 5 or 6to2.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1, 3, 4, 5 or 6to2.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per diodePPP peak pulse power tp= 8/20μs [1][2]- 200 W
IPP peak pulse current tp= 8/20μs [1][2]
PESD3V3S5UD - 20 A
PESD5V0S5UD - 20 A
PESD12VS5UD - 10 A
PESD15VS5UD - 6 A
PESD24VS5UD - 4 A
Per device junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. ESD maximum ratings
Per diodeVESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2]
PESD3V3S5UD - 30 kV
PESD5V0S5UD - 30 kV
PESD12VS5UD - 30 kV
PESD15VS5UD - 30 kV
PESD24VS5UD - 23 kV
PESDxS5UD series MIL-STD-883 (human
body model)
-10 kV
Table 7. ESD standards compliance
Per diodeIEC 61000-4-2; level 4 (ESD) >15 kV (air); >8 kV (contact)
MIL-STD-883; class 3 (human body model) >10kV
NXP Semiconductors PESDxS5UD series
Fivefold ESD protection diode arrays Characteristics
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
Per diodeVRWM reverse standoff voltage
PESD3V3S5UD - - 3.3 V
PESD5V0S5UD - - 5 V
PESD12VS5UD - - 12 V
PESD15VS5UD - - 15 V
PESD24VS5UD - - 24 V
IRM reverse leakage current
PESD3V3S5UD VRWM= 3.3V - 300 800 nA
PESD5V0S5UD VRWM=5V - 80 200 nA
PESD12VS5UD VRWM=12V - 0.05 15 nA
PESD15VS5UD VRWM=15V - 0.05 15 nA
PESD24VS5UD VRWM=24V - 0.05 15 nA
VBR breakdown voltage IR =1mA
PESD3V3S5UD 5.3 5.6 5.9 V
PESD5V0S5UD 6.4 6.8 7.2 V
PESD12VS5UD 12.5 14.5 16 V
PESD15VS5UD 17 18 19 V
PESD24VS5UD 25.5 27 29 V
NXP Semiconductors PESDxS5UD series
Fivefold ESD protection diode arrays[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4, 5 or 6to2. diode capacitance f=1 MHz; VR =0V
PESD3V3S5UD - 215 300 pF
PESD5V0S5UD - 165 220 pF
PESD12VS5UD - 73 100 pF
PESD15VS5UD - 60 90 pF
PESD24VS5UD - 45 70 pF
VCL clamping voltage [1][2]
PESD3V3S5UD IPP=1A --8 V
IPP=20A --12 V
PESD5V0S5UD IPP=1A --8 V
IPP=20A --13 V
PESD12VS5UD IPP=1A --17 V
IPP=10A --24 V
PESD15VS5UD IPP=1A --22 V
IPP=6A --33 V
PESD24VS5UD IPP=1A --33 V
IPP=4A --52 V
rdif differential resistance IR=5 mA --25 Ω
Table 8. Characteristics …continuedTamb =25 °C unless otherwise specified.
NXP Semiconductors PESDxS5UD series
Fivefold ESD protection diode arrays
NXP Semiconductors PESDxS5UD series
Fivefold ESD protection diode arrays
