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PESD12VS4UD-PESD15VS4UD-PESD24VS4UD-PESD3V3S4UD-PESD5V0S4UD
Quadruple ESD protection diode arrays in a SOT457 package
Product profile1.1 General descriptionQuadruple ElectroStatic Discharge (ESD) protection diode arrays in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package designed to protect up to 4 signal
lines from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
Rev. 02 — 21 August 2009 Product data sheet ESD protection of up to 4 lines n ESD protection up to 30 kV Max. peak pulse power: PPP= 200W n IEC 61000-4-2; level 4 (ESD) Ultra low leakage current: IRM =50pA n IEC 61000-4-5; (surge); IPP up to 20A Low clamping voltage: VCL =12V at
IPP =20A Computers and peripherals n Communication systems Audio and video equipment n Portable electronics Cellular handsets and accessories n Subscriber Identity Module (SIM) card
protection
Table 1. Quick reference data
Per diodeVRWM reverse standoff voltage
PESD3V3S4UD - - 3.3 V
PESD5V0S4UD - - 5 V
PESD12VS4UD - - 12 V
PESD15VS4UD - - 15 V
PESD24VS4UD - - 24 V
NXP Semiconductors PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package Pinning information Ordering information Marking diode capacitance f=1 MHz; VR =0V
PESD3V3S4UD - 215 300 pF
PESD5V0S4UD - 165 220 pF
PESD12VS4UD - 73 100 pF
PESD15VS4UD - 60 90 pF
PESD24VS4UD - 45 70 pF
Table 1. Quick reference data …continued
Table 2. Pinning cathode1 common anode cathode2 cathode3 common anode cathode4
006aaa156123
Table 3. Ordering informationPESD3V3S4UD SC-74 plastic surface-mounted package (TSOP6); leads
SOT457
PESD5V0S4UD
PESD12VS4UD
PESD15VS4UD
PESD24VS4UD
Table 4. Marking codesPESD3V3S4UD K4
PESD5V0S4UD K5
PESD12VS4UD K6
PESD15VS4UD K7
PESD24VS4UD K8
NXP Semiconductors PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package Limiting values[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4 or 6to 2 or5
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1, 3, 4 or 6to 2 or5
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
PPP peak pulse power tp= 8/20μs [1][2]- 200 W
IPP peak pulse current tp= 8/20μs [1][2]
PESD3V3S4UD - 20 A
PESD5V0S4UD - 20 A
PESD12VS4UD - 10 A
PESD15VS4UD - 6 A
PESD24VS4UD - 4 A junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. ESD maximum ratingsVESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2]
PESD3V3S4UD - 30 kV
PESD5V0S4UD - 30 kV
PESD12VS4UD - 30 kV
PESD15VS4UD - 30 kV
PESD24VS4UD - 23 kV
PESDxS4UD series HBM MIL-STD-883 - 10 kV
Table 7. ESD standards complianceIEC 61000-4-2; level 4 (ESD) >15 kV (air); >8 kV (contact)
HBM MIL-STD-883; class3 >10kV
NXP Semiconductors PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package Characteristics
Table 8. CharacteristicsTamb =25 °C unless otherwise specified
Per diodeVRWM reverse standoff voltage
PESD3V3S4UD - - 3.3 V
PESD5V0S4UD - - 5 V
PESD12VS4UD - - 12 V
PESD15VS4UD - - 15 V
PESD24VS4UD - - 24 V
IRM reverse leakage current
PESD3V3S4UD VRWM= 3.3V - 300 800 nA
PESD5V0S4UD VRWM=5V - 80 200 nA
PESD12VS4UD VRWM=12V - 0.05 15 nA
PESD15VS4UD VRWM=15V - 0.05 15 nA
PESD24VS4UD VRWM=24V - 0.05 15 nA
VBR breakdown voltage IR =1mA
PESD3V3S4UD 5.3 5.6 5.9 V
PESD5V0S4UD 6.4 6.8 7.2 V
PESD12VS4UD 12.5 14.5 16 V
PESD15VS4UD 15.5 18 20.5 V
PESD24VS4UD 25.5 27 29 V
NXP Semiconductors PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4 or 6to 2 or5 diode capacitance f=1 MHz; VR =0V
PESD3V3S4UD - 215 300 pF
PESD5V0S4UD - 165 220 pF
PESD12VS4UD - 73 100 pF
PESD15VS4UD - 60 90 pF
PESD24VS4UD - 45 70 pF
VCL clamping voltage [1][2]
PESD3V3S4UD IPP=1A --8 V
IPP=20A --12 V
PESD5V0S4UD IPP=1A --8 V
IPP=20A --13 V
PESD12VS4UD IPP=1A --17 V
IPP=10A --24 V
PESD15VS4UD IPP=1A --22 V
IPP=6A --33 V
PESD24VS4UD IPP=1A --33 V
IPP=4A --52 V
rdif differential resistance IR=5 mA --25 Ω
Table 8. Characteristics …continuedTamb =25 °C unless otherwise specified
NXP Semiconductors PESDxS4UD series
Quadruple ESD protection diode arrays in a SOT457 package
