PESD12VS2UT ,PESDxS2UT series; Double ESD protection diodes in SOT23 packageFEATURES QUICK REFERENCE DATA• Uni-directional ESD protection of up to two linesSYMBOL PARAMETER VA ..
PESD12VS4UD ,Quadruple ESD protection diode arrays in a SOT457 packageFeaturesn ESD protection of up to 4 lines n ESD protection up to 30 kVn Max. peak pulse power: P = ..
PESD12VS5UD ,Fivefold ESD protection diode arraysPESDxS5UD seriesFivefold ESD protection diode arraysRev. 02 — 7 December 2006 Product data sheet1. ..
PESD12VU1UT ,Ultra low capacitance ESD protection diode in SOT23 packageApplicationsn 10/100/1000 Ethernet n Local Area Network (LAN) equipmentn FireWire n Computers and p ..
PESD15VL1BA ,PESDxL1BA series; Low capacitance bidirectional ESD protection diodes in SOD323General descriptionBidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SO ..
PESD15VL2BT ,Low capacitance double bidirectional ESD protection diodes in SOT23PESDxL2BT seriesLow capacitance double bidirectional ESD protection diodesin SOT23Rev. 02 — 25 Augu ..
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PESD12VS2UT-PESD15VS2UT-PESD24VS2UT-PESD3V3S2UT
PESDxS2UT series; Double ESD protection diodes in SOT23 package
NXP Semiconductors Product data sheet
Double ESD protection diodes in SOT23
package PESDxS2UT series
FEATURES Uni-directional ESD protection of up to two lines Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A Ultra-low reverse leakage current: IRM < 700 nA ESD protection > 23 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.
APPLICATIONS Computers and peripherals Communication systems Audio and video equipment High speed data lines Parallel ports.
DESCRIPTIONUni-directional double ESD protection diodes in a SOT23
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.
MARKING
Note * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
NXP Semiconductors Product data sheet
Double ESD protection diodes in SOT23
package PESDxS2UT series
ORDERING INFORMATION
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Non-repetitive current pulse 8/20µ µs exponential decay waveform; see Fig.2. Measured across either pins 1 and 3 or pins 2 and 3.
NXP Semiconductors Product data sheet
Double ESD protection diodes in SOT23
package PESDxS2UT series
ESD maximum ratings
Notes Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3. Measured across either pins 1 and 3 or pins 2 and 3.
ESD standards compliance
NXP Semiconductors Product data sheet
Double ESD protection diodes in SOT23
package PESDxS2UT series
ELECTRICAL CHARACTERISTICSTj = 25 °C unless otherwise specified.
NXP Semiconductors Product data sheet
Double ESD protection diodes in SOT23
package PESDxS2UT series
Notes Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2. Measured either across pins 1 and 3 or pins 2 and 3.
NXP Semiconductors Product data sheet
Double ESD protection diodes in SOT23
package PESDxS2UT series
