PESD3V3S2UAT ,Double ESD protection diodes in SOT23 package DISCRETE SEMICONDUCTORS DATA SHEETPESDxS2UAT seriesDouble ESD protection diodes in SOT23 packagePr ..
PESD3V3S2UT ,PESDxS2UT series; Double ESD protection diodes in SOT23 packageFEATURES QUICK REFERENCE DATA• Uni-directional ESD protection of up to two linesSYMBOL PARAMETER VA ..
PESD3V3S2UT ,PESDxS2UT series; Double ESD protection diodes in SOT23 packageFEATURES QUICK REFERENCE DATA• Uni-directional ESD protection of up to two linesSYMBOL PARAMETER VA ..
PESD3V3S4UD ,Quadruple ESD protection diode arrays in a SOT457 packageFeaturesn ESD protection of up to 4 lines n ESD protection up to 30 kVn Max. peak pulse power: P = ..
PESD3V3S4UD ,Quadruple ESD protection diode arrays in a SOT457 packageLimiting valuesTable 5.
PESD3V3U1UB ,Ultra low capacitance unidirectional ESD protection diodesApplicationsn USB interfaces n Cellular handsets and accessoriesn 10/100/1000 Mbit/s Ethernet n Por ..
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PIMT1 ,PNP general purpose double transistorFEATURES PINNING• 600 mW total power dissipationPIN DESCRIPTION• Low current (max. 100 mA)1, 4 emit ..
PIMT1 ,PNP general purpose double transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PESD12VS2UAT-PESD15VS2UAT-PESD24VS2UAT-PESD3V3S2UAT-PESD5V0S2UAT
Double ESD protection diode in SOT23 package
NXP Semiconductors Product data sheet
Double ESD protection diodes
in SOT23 package PESDxS2UAT series
FEATURES Unidirectional ESD protection of up to two lines Common-cathode configuration Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A Ultra-low reverse leakage current: IRM < 700 nA ESD protection > 30 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.
APPLICATIONS Computers and peripherals Communication systems Audio and video equipment Data lines CAN bus protection.
DESCRIPTIONUnidirectional double ESD protection diodes in common
cathode configuration in the SOT23 plastic package.
Designed to protect up to two transmission or data lines
against damage from ElectroStatic Discharge (ESD) and
other transients.
MARKING
Note * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
NXP Semiconductors Product data sheet
Double ESD protection diodes
in SOT23 package PESDxS2UAT series
ORDERING INFORMATION
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Non-repetitive current pulse 8/20µ µs exponential decay waveform; see Fig.2. Measured across either pins 1 and 3 or pins 2 and 3.
NXP Semiconductors Product data sheet
Double ESD protection diodes
in SOT23 package PESDxS2UAT series
ESD maximum ratings
Notes Device stressed with ten non-repetitive ESD pulses; see Fig.3. Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
ESD standards compliance
NXP Semiconductors Product data sheet
Double ESD protection diodes
in SOT23 package PESDxS2UAT series
ELECTRICAL CHARACTERISTICSTj = 25 °C; unless otherwise specified.
NXP Semiconductors Product data sheet
Double ESD protection diodes
in SOT23 package PESDxS2UAT series
Notes Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2. Measured either across pins 1 and 3 or pins 2 and 3.
NXP Semiconductors Product data sheet
Double ESD protection diodes
in SOT23 package PESDxS2UAT series
