PESD5V0L1BA ,PESDxL1BA series; Low capacitance bidirectional ESD protection diodes in SOD323Featuresn Bidirectional ESD protection of one line n ESD protection > 23 kVn Max. peak pulse power: ..
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PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
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PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PIMT1 ,PNP general purpose double transistorFEATURES PINNING• 600 mW total power dissipationPIN DESCRIPTION• Low current (max. 100 mA)1, 4 emit ..
PIMT1 ,PNP general purpose double transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PESD12VL1BA-PESD24VL1BA-PESD3V3L1BA-PESD5V0L1BA
Low capacitance bidirectional ESD protection diodes in SOD323
Product profile1.1 General descriptionBidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323
(SC-76) SMD plastic package designed to protect one signal line from the damage
caused by ESD and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in
SOD323
Rev. 02 — 20 August 2009 Product data sheet Bidirectional ESD protection of one line n ESD protection > 23 kV Max. peak pulse power: Ppp = 500 W n IEC 61000-4-2, level 4 (ESD) Low clamping voltage: V(CL)R = 26 V n IEC 61000-4-5 (surge); Ipp = 18 A Ultra low leakage current: IRM < 0.09 μAn Very small SMD plastic package Computers and peripherals n Data lines Communication systems n CAN bus protection Audio and video equipment
Table 1. Quick reference dataVRWM reverse stand-off voltage
PESD3V3L1BA - - 3.3 V
PESD5V0L1BA - - 5.0 V
PESD12VL1BA - - 12 V
PESD15VL1BA - - 15 V
PESD24VL1BA - - 24 V diode capacitance VR = 0 V;
f=1MHz
PESD3V3L1BA - 101 - pF
PESD5V0L1BA - 75 - pF
PESD12VL1BA - 19 - pF
PESD15VL1BA - 16 - pF
PESD24VL1BA - 11 - pF
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323 Pinning information Ordering information Marking
Table 2. Pinning cathode 1 cathode 2
sym0451
Table 3. Ordering informationPESDxL1BA series SC-76 plastic surface mounted package; 2 leads SOD323
Table 4. Marking codesPESD3V3L1BA AB
PESD5V0L1BA AC
PESD12VL1BA AD
PESD15VL1BA AE
PESD24VL1BA AF
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323 Limiting values[1] Non-repetitive current pulse 8/20 μs exponential decay waveform; see Figure1.
[1] Device stressed with ten non-repetitive ESD pulses; see Figure2.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Ppp peak pulse power 8/20μs [1]
PESD3V3L1BA - 500 W
PESD5V0L1BA - 500 W
PESD12VL1BA - 200 W
PESD15VL1BA - 200 W
PESD24VL1BA - 200 W
Ipp peak pulse current 8/20μs [1]
PESD3V3L1BA - 18 A
PESD5V0L1BA - 15 A
PESD12VL1BA - 5 A
PESD15VL1BA - 5 A
PESD24VL1BA - 3 A junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. ESD maximum ratingsESD electrostatic discharge capability IEC 61000-4-2
(contact discharge)
[1]
PESD3V3L1BA - 30 kV
PESD5V0L1BA - 30 kV
PESD12VL1BA - 30 kV
PESD15VL1BA - 30 kV
PESD24VL1BA - 23 kV
PESDxL1BA series HBM MIL-Std 883 - 10 kV
Table 7. ESD standards complianceIEC 61000-4-2; level 4 (ESD); Figure2 > 15 kV (air); > 8 kV (contact)
HBM MIL-Std 883; class 3 > 4 kV
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323 Characteristics
Table 8. CharacteristicsTamb = 25 °C unless otherwise specified
VRWM reverse stand-off voltage
PESD3V3L1BA - - 3.3 V
PESD5V0L1BA - - 5.0 V
PESD12VL1BA - - 12 V
PESD15VL1BA - - 15 V
PESD24VL1BA - - 24 V
IRM reverse leakage current see Figure7
PESD3V3L1BA VRWM = 3.3 V - 0.09 2 μA
PESD5V0L1BA VRWM = 5.0 V - 0.01 1 μA
PESD12VL1BA VRWM = 12 V - < 1 50 nA
PESD15VL1BA VRWM = 15 V - < 1 50 nA
PESD24VL1BA VRWM = 24 V - < 1 50 nA
V(BR) breakdown voltage IR = 5 mA
PESD3V3L1BA 5.8 6.4 6.9 V
PESD5V0L1BA 7.0 7.6 8.2 V
PESD12VL1BA 14.2 15.9 16.7 V
PESD15VL1BA 17.1 18.9 20.3 V
PESD24VL1BA 25.4 27.8 30.3 V diode capacitance VR = 0 V; f = 1 MHz;
see Figure 5 and6
PESD3V3L1BA - 101 - pF
PESD5V0L1BA - 75 - pF
PESD12VL1BA - 19 - pF
PESD15VL1BA - 16 - pF
PESD24VL1BA - 11 - pF
V(CL)R clamping voltage [1]
PESD3V3L1BA Ipp = 1 A - - 8 V
Ipp = 18 A - - 26 V
PESD5V0L1BA Ipp = 1 A - - 10 V
Ipp = 15 A - - 33 V
PESD12VL1BA Ipp = 1 A - - 20 V
Ipp = 5A - - 37 V
PESD15VL1BA Ipp = 1 A - - 25 V
Ipp = 5 A - - 44 V
PESD24VL1BA Ipp = 1 A - - 40 V
Ipp = 3 A - - 70 V
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323[1] Non-repetitive current pulse 8/20 μs exponential decay waveform; see Figure1.
rdif differential resistance IR = 1 mA
PESD3V3L1BA - - 400 Ω
PESD5V0L1BA - - 80 Ω
PESD12VL1BA - - 200 Ω
PESD15VL1BA - - 225 Ω
PESD24VL1BA - - 300 Ω
Table 8. Characteristics …continuedTamb = 25 °C unless otherwise specified
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
NXP Semiconductors PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
