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PEP01-5841
Power over Ethernet power supply protection
November 2013 DocID15657 Rev 4 1/10
PEP01-5841Power over Ethernet power supply protection
Datasheet - production data
Features Peak pulse power: up to 2.7 kW (8/20 µs) Stand-off voltage: 58 V 4 unidirectional Transils™ and 4 decoupling
capacitances Low clamping voltage: 100 V Low leakage current: 0.2 µA at 25 °C 1 µA at 85 °C Operating Tj max: 150 °C JEDEC registered package outline
Complies with the following standards IEC61000-4-2 level 4 15 kV (air discharge) 8 kV (contact discharge) IEC61000-4-5 level 2 ±1 kV 42 IEEE 802.3af-2003 IEEE 802.3at-2008
DescriptionThe PEP01-5841 has been designed to protect
power over Ethernet PSE equipment against line
overvoltages. It embeds 4 decoupling capacitors
to stabilize power supplies.
It is compatible with IEEE 802.3af-2003 and
IEEE 802.3at-2008 requirements and it allows
PoE based systems to be protected against both
electrical overstress (EOS) and electrostatic
discharges (ESD) according to IEC61000-4-5 and
IEC61000-4-2.
The low clamping voltage (100 V) makes it
compatible with PMOS and PSE controller
technologies. Developed in Planar technology, it
provides high reliability level.
Packaged in SO-8, this minimizes PCB
consumption (footprint in accordance with the
IPC 7531 standard).
Figure 1. Functional diagramTM: Transil is a trademark of STMicroelectronics
Characteristics PEP01-5841 DocID15657 Rev 4
1 Characteristics
Figure 2. Electrical characteristics - definitions (Tamb = 25 °C)
Table 1. Absolute ratings (Tamb = 25 °C)
Table 2. Electrical characteristics - values (T amb = 25 °C) Pulse test: tp < 50 ms To calculate maximum clamping voltage at other surge level, use the following formula:V CLmax = RD x IPP + V BRmax To calculate VBR versus junction temperature, use the following formula:VBR @ TJ = VBR @ 25 °C x (1 + T x (TJ - 25))
DocID15657 Rev 4 3/10
PEP01-5841 Characteristics
Figure 3. Pulse waveform
Figure 4. Peak power dissipation versus initial
junction temperature
Figure 5. Peak pulse power versus exponential
pulse duration (Tj initial = 25 °C)
Figure 6. Clamping voltage versus peak pulse
current (exponential waveform, maximum
values)
Figure 7. Capacitance versus voltage (typical
values)
Characteristics PEP01-58414/10 DocID15657 Rev 4
Figure 10. Leakage current versus junction temperature (typical values)
Figure 8. Peak forward voltage drop versus
peak forward current (typical values)
Figure 9. Relative variation of thermal
impedance junction to ambient versus pulse
duration
DocID15657 Rev 4 5/10
PEP01-5841 Application
2 Application
Figure 11. Typical application circuit with PMOS integrated in PSE controller
Application PEP01-5841 DocID15657 Rev 4
Figure 12. Typical application circuit with external PMOS
