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PEMH30-PUMH30
NPN/NPN double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open
Product profile1.1 General descriptionNPN/NPN double Resistor-Equipped Transistors (RET)in Surface Mounted Device (SMD)
plastic packages.
1.2 Features
1.3 Applications
1.4 Quick reference data
PEMH30; PUMH30
NPN/NPN double resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 01 — 28 March 2006 Product data sheet
Table 1. Product overviewPEMH30 SOT666 - PEMD30 PEMB30
PUMH30 SOT363 SC-88 PUMD30 PUMB30 100 mA output current capability n Reduces component count Built-in bias resistors n Reduces pick and place costs Simplifies circuit design Low current peripheral driver n Cost-saving alternative for BC847BS
and BC847BV Control of IC inputs
Table 2. Quick reference data
Per transistorVCEO collector-emitter voltage open base - - 50 V output current - - 100 mA bias resistor 1 (input) 1.54 2.2 2.86 kΩ
Philips Semiconductors PEMH30; PUMH30
NPN/NPN double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning GND (emitter) TR1 input (base) TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 output (collector) TR1 001aab555 4 23
sym090
Table 4. Ordering informationPEMH30 - plastic surface mounted package; 6 leads SOT666
PUMH30 SC-88 plastic surface mounted package; 6 leads SOT363
Table 5. Marking codesPEMH30 2S
PUMH30 *B1
Philips Semiconductors PEMH30; PUMH30
NPN/NPN double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 5 V output current - 100 mA
ICM peak collector current single pulse;≤ 1ms 100 mA
Ptot total power dissipation Tamb≤25°C
SOT363 [1]- 200 mW
SOT666 [1][2]- 200 mW
Per devicePtot total power dissipation Tamb≤25°C
SOT363 [1]- 300 mW
SOT666 [1][2]- 300 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristics
Per transistorRth(j-a) thermal resistance from
junction to ambient
in free air
SOT363 [1]- - 625 K/W
SOT666 [1][2]- - 625 K/W
Per deviceRth(j-a) thermal resistance from
junction to ambient
in free air
SOT363 [1]- - 416 K/W
SOT666 [1][2]- - 416 K/W
Philips Semiconductors PEMH30; PUMH30
NPN/NPN double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Characteristics
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
Per transistorICBO collector-base cut-off
current
VCB=50 V; IE=0A - - 100 nA
ICEO collector-emitter cut-off
current
VCE=30 V; IB =0A - - 1 μA
VCE=30 V; IB =0A;= 150°C 50 μA
IEBO emitter-base cut-off
current
VEB =5V; IC=0A - - 100 nA
hFE DC current gain VCE =5V; IC =20mA 30 - -
VCEsat collector-emitter
saturation voltage=10 mA; IB= 0.5 mA - - 150 mV bias resistor 1 (input) 1.54 2.2 2.86 kΩ collector capacitance VCB =10V;IE =ie =0A;=1 MHz - 2.5 pF
Philips Semiconductors PEMH30; PUMH30
NPN/NPN double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Package outline Packing information[1] For further information and the availability of packing methods, see Section13.
[2] T1: normal taping
[3] T2: reverse taping
Table 9. Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]
PEMH30 SOT666 2 mm pitch, 8 mm tape and reel - - -315- mm pitch, 8 mm tape and reel - -115- -
PUMH30 SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165
Philips Semiconductors PEMH30; PUMH30
NPN/NPN double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
10. Soldering
