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PEMH19-PUMH19
NPN/NPN resistor-equipped transistors; R1 = 22 kOhm, R2 = open
Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).
1.2 Features Built-in bias resistor Simplifies circuit design Reduces component count Reduces pick and place costs
1.3 Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications
1.4 Quick reference data
PEMH19; PUMH19
NPN/NPN resistor-equipped transistors;
R1 = 22 kΩ, R2 = open
Rev. 03 — 15 November 2009 Product data sheet
Table 1. Product overviewPEMH19 SOT666 - PEMD19 PEMB19
PUMH19 SOT363 SC-88 PUMD19 PUMB19
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - 50 V output current (DC) - - 100 mA bias resistor 1 (input) 15.4 22 28.6 kΩ
NXP Semiconductors PEMH19; PUMH19
NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = open Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning GND (emitter) TR1 input (base) TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 output (collector) TR1
Table 4. Ordering informationPEMH19 - plastic surface mounted package; 6 leads SOT666
PUMH19 SC-88 plastic surface mounted package; 6 leads SOT363
Table 5. Marking codesPEMH19 6F
PUMH19 H6*
NXP Semiconductors PEMH19; PUMH19
NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = open Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 5 V output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb≤25°C
SOT363 [1] -200 mW
SOT666 [1][2] -200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Per devicePtot total power dissipation Tamb≤25°C
SOT363 [1] -300 mW
SOT666 [1][2] -300 mW
Table 7. Thermal characteristics
Per transistorRth(j-a) thermal resistance from
junction to ambient
in free air
SOT363 [1] -- 625 K/W
SOT666 [1][2] -- 625 K/W
Per deviceRth(j-a) thermal resistance from
junction to ambient
in free air
SOT363 [1] -- 416 K/W
SOT666 [1][2] -- 416 K/W
NXP Semiconductors PEMH19; PUMH19
NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = open Characteristics
Table 8. CharacteristicsTamb = 25 °C unless otherwise specified.
Per transistorICBO collector-base cut-off
current
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE =30V; IB =0A - - 1 μA
VCE =30V; IB =0A; =150°C 50 μA
IEBO emitter-base cut-off
current
VEB =5V; IC=0A - - 100 nA
hFE DC current gain VCE =5V; IC =1mA 100 - -
VCEsat collector-emitter
saturation voltage =10mA; IB =0.5 mA - - 150 mV bias resistor 1 (input) 15.4 22 28.6 kΩ collector capacitance VCB =10V; IE =ie =0A; 1MHz 2.5 pF
NXP Semiconductors PEMH19; PUMH19
NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = open Package outline Packing information[1] For further information and the availability of packing methods, see Section12.
[2] T1: normal taping
[3] T2: reverse taping
Table 9. Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]
PEMH19 SOT666 2 mm pitch, 8 mm tape and reel - - -315 - mm pitch, 8 mm tape and reel - -115 - -
PUMH19 SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165
NXP Semiconductors PEMH19; PUMH19
NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = open
10. Revision history Table 10. Revision historyPEMH19_PUMH19_3 20091115 Product data sheet - PEMH19_PUMH19_2
Modifications:
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 3 “Package outline SOT363 (SC-88)”: updated
PEMH19_PUMH19_2 20050502 Product data sheet - PUMH19_1
PUMH19_1 20031016 Product specification - -
