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PUMH11NXP/PHILIPSN/a4000avai
PEMH11NXP/PHILIPSN/a4000avaiR1 = 10 kOhm, R2 = 10 kOhm


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PEMH11-PUMH11
R1 = 10 kOhm, R2 = 10 kOhm
1. Product profile
1.1 General description
NPN/NPN Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)
plastic packages.
1.2 Features and benefits
1.3 Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications
1.4 Quick reference data
PEMH1 1; PUMH11
NPN/NPN resistor-equipped transistors;
R1 = 10 k, R2 = 10 k
Rev. 6 — 29 November 2011 Product data sheet
Table 1. Product overview
PEMH11 SOT666 - PEMD3 PEMB11 ultra small and flat lead
PUMH11 SOT363 SC-88 PUMD3 PUMB11 very small 100 mA output current capability  Reduces component count Built-in bias resistors  Reduces pick and place costs Simplifies circuit design  AEC-Q101 qualified
Table 2. Quick reference data
Per transistor
VCEO collector-emitter voltage open base - - 50 V output current - - 100 mA bias resistor 1 (input) 7 10 13 k
R2/R1 bias resistor ratio 0.8 1 1.2
NXP Semiconductors PEMH11; PUMH11
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k
2. Pinning information
3. Ordering information
4. Marking
[1] * = placeholder for manufacturing site code.
Table 3. Pinning
Table 4. Ordering information
PEMH11 - plastic surface-mounted package; 6 leads SOT666
PUMH11 SC-88 plastic surface-mounted package; 6 leads SOT363
Table 5. Marking codes
PEMH11 H1
PUMH11 H*1
NXP Semiconductors PEMH11; PUMH11
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistor
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V input voltage
positive - +40 V
negative - 10 V output current - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb25C [1]
PEMH11 (SOT666) [2] -200 mW
PUMH11 (SOT363) - 200 mW
Per device
Ptot total power dissipation Tamb25C [1]
PEMH11 (SOT666) [2] -300 mW
PUMH11 (SOT363) - 300 mW junction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors PEMH11; PUMH11
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 7. Thermal characteristics
Per transistor
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]
PEMH11 (SOT666) [2] --625 K/W
PUMH11 (SOT363) - - 625 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]
PEMH11 (SOT666) [2] --417 K/W
PUMH11 (SOT363) - - 417 K/W
NXP Semiconductors PEMH11; PUMH11
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k
NXP Semiconductors PEMH11; PUMH11
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k
7. Characteristics
[1] Characteristics of built-in transistor.
Table 8. Characteristics
Tamb =25 C unless otherwise specified.
Per transistor
ICBO collector-base
cut-off current
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE =30V; IB=0A --1 A
VCE =30V; IB =0A; = 150C
--5 A
IEBO emitter-base
cut-off current
VEB =5V; IC=0A - - 400 A
hFE DC current gain VCE =5V; IC =5mA 30 - -
VCEsat collector-emitter
saturation voltage =10mA; IB= 0.5 mA - - 150 mV
VI(off) off-state input
voltage
VCE =5V; IC =100 A- 1.1 0.8 V
VI(on) on-state input
voltage
VCE= 0.3 V; IC =10mA 2.5 1.8 - V bias resistor 1 (input) 7 10 13 k
R2/R1 bias resistor ratio 0.8 1 1.2 collector capacitance VCB =10V; IE =ie =0A; 1MHz
--2.5 pF transition frequency VCB =5V; IC =10 mA; = 100 MHz
[1]- 230 - MHz
NXP Semiconductors PEMH11; PUMH11
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k
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