PEMH1 ,NPN/NPN resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟Features and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PEMH10 ,R1 = 2.2 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PEMH11 ,R1 = 10 kOhm, R2 = 10 kOhmapplications1.4 Quick reference data Table 2. Quick reference dataSymbol Parameter Conditions Min T ..
PEMH13 ,R1 = 4.7 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PEMH14 ,NPN/NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = openLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PEMH14 ,NPN/NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = openapplications1.4 Quick reference data Table 2. Quick reference dataSymbol Parameter Conditions Min T ..
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PEMH1-PUMH1
NPN/NPN resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟
1. Product profile
1.1 General descriptionNPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted
Device (SMD) plastic packages.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PEMH1; PUMH1
NPN/NPN resistor-equipped transistors;
R1 = 22 k, R2 = 22 k
Rev. 5 — 2 December 2011 Product data sheet
Table 1. Product overviewPEMH1 SOT666- PEMD2 PEMB1 ultra small and flat lead
PUMH1 SOT363 SC-88 PUMD2 PUMB1 very small 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design AEC-Q101 qualified Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications
Table 2. Quick reference data
Per transistorVCEO collector-emitter voltage open base - - 50 V output current - - 100 mA bias resistor 1 (input) 15.4 22 28.6 k
R2/R1 bias resistor ratio 0.8 1 1.2
NXP Semiconductors PEMH1; PUMH1
NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
2. Pinning information
3. Ordering information
4. Marking[1] * = placeholder for manufacturing site code
Table 3. Pinning
Table 4. Ordering informationPEMH1 - plastic surface-mounted package; 6 leads SOT666
PUMH1 SC-88 plastic surface-mounted package; 6 leads SOT363
Table 5. Marking codesPEMH1 H2
PUMH1 H*2
NXP Semiconductors PEMH1; PUMH1
NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
5. Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V input voltage
positive - +40 V
negative - 10 V output current - 100 mA
ICM peak collector current single pulse; 1ms
-100 mA
Ptot total power dissipation Tamb25C
PEMH1 (SOT666) [1][2] -200 mW
PUMH1 (SOT363) [1] -200 mW
Per devicePtot total power dissipation Tamb25C
PEMH1 (SOT666) [1][2] -300 mW
PUMH1 (SOT363) [1] -300 mW junction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors PEMH1; PUMH1
NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
6. Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 7. Thermal characteristics
Per transistorRth(j-a) thermal resistance from
junction to ambient
in free air
PEMH1 (SOT666) [1][2]- - 625 K/W
PUMH1 (SOT363) [1]- - 625 K/W
Per deviceRth(j-a) thermal resistance from
junction to ambient
in free air
PEMH1 (SOT666) [1][2]- - 417 K/W
PUMH1 (SOT363) [1]- - 417 K/W
NXP Semiconductors PEMH1; PUMH1
NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 kNXP Semiconductors PEMH1; PUMH1
NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
7. Characteristics[1] Characteristics of built-in transistor
Table 8. CharacteristicsTamb =25 C unless otherwise specified.
Per transistorICBO collector-base cut-off
current
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter cut-off
current
VCE =30V; IB =0A - - 100 mA
VCE =30V; IB =0A; = 150C 5 A
IEBO emitter-base cut-off
current
VEB =5V; IC =0A - - 180 A
hFE DC current gain VCE =5V; IC =5 mA 60 - -
VCEsat collector-emitter
saturation voltage =10mA; IB =0.5 mA - - 150 mV
VI(off) off-state input voltage VCE =5V; IC= 100 A- 1.1 0.8 V
VI(on) on-state input voltage VCE =0.3 V; IC =5 mA 2.5 1.7 - V bias resistor 1 (input) 15.4 22 28.6 k
R2/R1 bias resistor ratio 0.8 1 1.2 collector capacitance VCB =10V; IE =ie =0A;
f=1MHz 2.5 pF transition frequency VCE =5V; IC =10 mA;
f=100MHz
[1] -230 -MHz
NXP Semiconductors PEMH1; PUMH1
NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
