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Partno	Mfg	Dc	Qty	Available	Descript
PUMD3	NXP	N/a	20300	avai	NPN/PNP resistor-equipped transistors; R1 = 10 k惟, R2 = 10 k惟
PEMD3	NXP	N/a	152000	avai	NPN/PNP resistor-equipped transistors R1 = 10 kOhm/R2 = 10 kOhm
PEMD3	NXP/PHILIPS	N/a	7000	avai	NPN/PNP resistor-equipped transistors R1 = 10 kOhm/R2 = 10 kOhm
PIMD3	NXP	N/a	48000	avai	PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm

PEMD3 ,NPN/PNP resistor-equipped transistors R1 = 10 kOhm/R2 = 10 kOhmapplications1.4 Quick reference data Table 2. Quick reference dataSymbol Parameter Conditions Min T ..
PEMD3 ,NPN/PNP resistor-equipped transistors R1 = 10 kOhm/R2 = 10 kOhm PEMD3; PIMD3; PUMD3NPN/PNP resistor-equipped transistors;R1 = 10 k, R2 = 10 kRev. 11 — 25 Septem ..
PEMD30 ,NPN/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = openLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PEMD4 ,NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = openapplicationsDESCRIPTION• Control of IC inputs.NPN/PNP resistor-equipped transistors (see “Simplifie ..
PEMD48 ,NPN/PNP resistor-equipped transistors; R1 = 47 k惟, R2 = 47 k惟 and R1 = 2.2 k惟, R2 = 47 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in small Surface-Mounted Devi ..
PEMD6 ,R2 = openLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits  100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..

PEMD3-PIMD3-PUMD3
NPN/PNP resistor-equipped transistors R1 = 10 kOhm/R2 = 10 kOhm
1. Product profile
1.1 General description
NPN/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic
packages.
1.2 Features and benefits
1.3 Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications
1.4 Quick reference data
PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors;
R1 = 10 k, R2 = 10 k
Rev. 11 — 25 September 2013 Product data sheet
Table 1. Product overview
PEMD3 SOT666 - PEMB11 PEMH11 ultra small and flat lead
PIMD3 SOT457 SC-74 - - small
PUMD3 SOT363 SC-88 PUMB11 PUMH11 very small 100 mA output current capability  Reduces component count Built-in bias resistors  Reduces pick and place costs Simplifies circuit design  AEC-Q101 qualified
Table 2. Quick reference data
Per transistor; for the PNP transistor (TR2) with negative polarity
VCEO collector-emitter voltage open base - - 50 V output current - - 100 mA bias resistor 1 (input) 7 10 13 k
R2/R1 bias resistor ratio 0.8 1 1.2
NXP Semiconductors PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors
2. Pinning information
3. Ordering information
4. Marking
[1] * = placeholder for manufacturing site code.
Table 3. Pinning
Table 4. Ordering information
PEMD3 - plastic surface-mounted package; 6 leads SOT666
PIMD3 SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
PUMD3 SC-88 plastic surface-mounted package; 6 leads SOT363
Table 5. Marking codes
PEMD3 D3
PIMD3 M7
PUMD3 D*3
NXP Semiconductors PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistor; for the PNP transistor (TR2) with negative polarity
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V input voltage TR1
positive - +40 V
negative - 10 V
input voltage TR2
positive - +10 V
negative - 40 V output current - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb25C [1]
PEMD3 (SOT666) - 200 mW
PIMD3 (SOT457) - 250 mW
PUMD3 (SOT363) - 200 mW
Per device
Ptot total power dissipation Tamb25C [1]
PEMD3 (SOT666) - 300 mW
PIMD3 (SOT457) - 400 mW
PUMD3 (SOT363) - 300 mW junction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 7. Thermal characteristics
Per transistor
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]
PEMD3 (SOT666) - - 625 K/W
PIMD3 (SOT457) - - 500 K/W
PUMD3 (SOT363) - - 625 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]
PEMD3 (SOT666) - - 417 K/W
PIMD3 (SOT457) - - 313 K/W
PUMD3 (SOT363) - - 417 K/W
NXP Semiconductors PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors

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