PEMD13-PUMD13 Fast Delivery |IC PHOENIX CO.,LIMITED

Home › P › P19 > PEMD13-PUMD13,NPN/PNP resistor-equipped transistors; R1 = 4.7 k惟, R2 = 47 k惟

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
PUMD13	NXP/PHILIPS	N/a	3000	avai	NPN/PNP resistor-equipped transistors
PUMD13	NXP	N/a	93000	avai	NPN/PNP resistor-equipped transistors
PEMD13	NXP	N/a	148000	avai	NPN/PNP resistor-equipped transistors; R1 = 4.7 k惟, R2 = 47 k惟

PEMD13 ,NPN/PNP resistor-equipped transistors; R1 = 4.7 k惟, R2 = 47 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PEMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟 PEMD2; PIMD2; PUMD2NPN/PNP resistor-equipped transistors;R1 = 22 k, R2 = 22 kRev. 8 — 14 Novembe ..
PEMD3 ,NPN/PNP resistor-equipped transistors R1 = 10 kOhm/R2 = 10 kOhmapplications1.4 Quick reference data Table 2. Quick reference dataSymbol Parameter Conditions Min T ..
PEMD3 ,NPN/PNP resistor-equipped transistors R1 = 10 kOhm/R2 = 10 kOhm PEMD3; PIMD3; PUMD3NPN/PNP resistor-equipped transistors;R1 = 10 k, R2 = 10 kRev. 11 — 25 Septem ..
PEMD30 ,NPN/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = openLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PEMD4 ,NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = openapplicationsDESCRIPTION• Control of IC inputs.NPN/PNP resistor-equipped transistors (see “Simplifie ..
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits  100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..

PEMD13-PUMD13
NPN/PNP resistor-equipped transistors; R1 = 4.7 k惟, R2 = 47 k惟
1. Product profile
1.1 General description
NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted
Device (SMD) plastic packages.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PEMD13; PUMD13
NPN/PNP resistor-equipped transistors;
R1 = 4.7 k, R2 = 47 k
Rev. 3 — 7 December 2011 Product data sheet
Table 1. Product overview
PEMD13 SOT666 - PEMB13 PEMH13 ultra small and flat
lead
PUMD13 SOT363 SC-88 PUMB13 PUMH13 very small 100 mA output current capability  Reduces component count Built-in bias resistors  Reduces pick and place costs Simplifies circuit design  AEC-Q101 qualified Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications
Table 2. Quick reference data
Per transistor; for the PNP transistor (TR2) with negative polarity
VCEO collector-emitter voltage open base - - 50 V output current - - 100 mA bias resistor 1 (input) 3.3 4.7 6.1 k
R2/R1 bias resistor ratio 8 10 12
NXP Semiconductors PEMD13; PUMD13
NPN/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
2. Pinning information
3. Ordering information
4. Marking
[1] * = placeholder for manufacturing site code
Table 3. Pinning
Table 4. Ordering information
PEMD13 - plastic surface-mounted package; 6 leads SOT666
PUMD13 SC-88 plastic surface-mounted package; 6 leads SOT363
Table 5. Marking codes
PEMD13 Z1
PUMD13 3*1
NXP Semiconductors PEMD13; PUMD13
NPN/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistor; for the PNP transistor (TR2) with negative polarity
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 5 V input voltage TR1
positive - +30 V
negative - 5V
input voltage TR2
positive - +5 V
negative - 30 V output current - 100 mA
ICM peak collector current single pulse;  1ms
-100 mA
Ptot total power dissipation Tamb25C
PEMD13 (SOT666) [1][2] -200 mW
PUMD13 (SOT363) [1] -200 mW
Per device
Ptot total power dissipation Tamb25C
PEMD13 (SOT666) [1][2] -300 mW
PUMD13 (SOT363) [1] -300 mW junction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors PEMD13; PUMD13
NPN/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 7. Thermal characteristics
Per transistor
Rth(j-a) thermal resistance from
junction to ambient
in free air
PEMD13 (SOT666) [1][2]- - 625 K/W
PUMD13 (SOT363) [1]- - 625 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient
in free air
PEMD13 (SOT666) [1][2]- - 417 K/W
PUMD13 (SOT363) [1]- - 417 K/W
NXP Semiconductors PEMD13; PUMD13
NPN/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

TEL:86-533-2716050 FAX:86-533-2716790