PEMB9 ,PNP/PNP resistor-equipped transistors; R1 = 10 k惟, R2 = 47 k惟DISCRETE SEMICONDUCTORSDATA SHEETPEMB9; PUMB9PNP/PNP resistor-equippedtransistors; R1 = 10 kΩ,R2=47 ..
PEMD10 ,R1 = 2.2 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PEMD10 ,R1 = 2.2 kOhm, R2 = 47 kOhm
PEMD10 ,R1 = 2.2 kOhm, R2 = 47 kOhm
PEMD12 ,NPN/PNP resistor-equipped transistors; R1 = 47 k惟, R2 = 47 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PEMD13 ,NPN/PNP resistor-equipped transistors; R1 = 4.7 k惟, R2 = 47 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PEMB9
PNP/PNP resistor-equipped transistors; R1 = 10 k惟, R2 = 47 k惟
Philips Semiconductors Product specification
PNP/PNP resistor-equipped transistors;
R1 = 10 kΩ , R2 = 47 kΩ PEMB9; PUMB9
FEATURES Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs.
APPLICATIONS Low current peripheral drivers Replacement of general purpose transistors in digital
applications Control of IC inputs.
DESCRIPTION PNP/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
QUICK REFERENCE DATA
PRODUCT OVERVIEW
Note*= p: Made in Hong Kong.= t: Made in Malaysia.= W: Made in China.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
Philips Semiconductors Product specification
PNP/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ PEMB9; PUMB9
ORDERING INFORMATION
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. Reflow soldering is the only recommended soldering method.
Philips Semiconductors Product specification
PNP/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ PEMB9; PUMB9
THERMAL CHARACTERISTICS
Notes Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. Reflow soldering is the only recommended soldering method.
CHARACTERISTICSTamb =25 °C unless otherwise specified.
Philips Semiconductors Product specification
PNP/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ PEMB9; PUMB9
PACKAGE OUTLINES
Plastic surface mounted package; 6 leads SOT666
Philips Semiconductors Product specification
PNP/PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ PEMB9; PUMB9
Plastic surface mounted package; 6 leads SOT363
