PEMB30 ,PNP/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = openApplicationsn Low current peripheral driver n Cost-saving alternative for BC857BSand BC857BVn Contr ..
PEMB4 ,PNP resistor-equipped double transistor R1 = 10 kOhm, R2 = openLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PEMB9 ,PNP/PNP resistor-equipped transistors; R1 = 10 k惟, R2 = 47 k惟DISCRETE SEMICONDUCTORSDATA SHEETPEMB9; PUMB9PNP/PNP resistor-equippedtransistors; R1 = 10 kΩ,R2=47 ..
PEMD10 ,R1 = 2.2 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PEMD10 ,R1 = 2.2 kOhm, R2 = 47 kOhm
PEMD10 ,R1 = 2.2 kOhm, R2 = 47 kOhm
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PEMB30-PUMB30
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open
Product profile1.1 General descriptionPNP/PNP double Resistor-EquippedT ransistors (RET)in Surface-Mounted Device (SMD)
plastic packages
1.2 Features
1.3 Applications
1.4 Quick reference data
PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 02 — 2 September 2009 Product data sheet
Table 1. Product overviewPEMB30 SOT666 - PEMD30 PEMH30
PUMB30 SOT363 SC-88 PUMD30 PUMH30 100 mA output current capability n Reduces component count Built-in bias resistors n Reduces pick and place costs Simplifies circuit design Low current peripheral driver n Cost-saving alternative for BC857BS
and BC857BV Control of IC inputs
Table 2. Quick reference data
Per transistorVCEO collector-emitter voltage open base - - −50 V output current - - −100 mA bias resistor 1 (input) 1.54 2.2 2.86 kΩ
NXP Semiconductors PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning GND (emitter) TR1 input (base) TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 output (collector) TR1 001aab555 4 23
006aaa268
Table 4. Ordering informationPEMB30 - plastic surface-mounted package; 6 leads SOT666
PUMB30 SC-88 plastic surface-mounted package; 6 leads SOT363
Table 5. Marking codesPEMB30 2T
PUMB30 *B2
NXP Semiconductors PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVCBO collector-base voltage open emitter - −50 V
VCEO collector-emitter voltage open base - −50 V
VEBO emitter-base voltage open collector - −5V output current - −100 mA
ICM peak collector current single pulse;≤ 1ms −100 mA
Ptot total power dissipation Tamb≤25°C
SOT363 [1]- 200 mW
SOT666 [1][2]- 200 mW
Per devicePtot total power dissipation Tamb≤25°C
SOT363 [1]- 300 mW
SOT666 [1][2]- 300 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Table 7. Thermal characteristics
Per transistorRth(j-a) thermal resistance from
junction to ambient
in free air
SOT363 [1]- - 625 K/W
SOT666 [1][2]- - 625 K/W
Per deviceRth(j-a) thermal resistance from
junction to ambient
in free air
SOT363 [1]- - 416 K/W
SOT666 [1][2]- - 416 K/W
NXP Semiconductors PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Characteristics
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
Per transistorICBO collector-base cut-off
current
VCB= −50 V; IE =0A - - −100 nA
ICEO collector-emitter cut-off
current
VCE= −30 V; IB =0A - - −1 μA
VCE= −30 V; IB =0A;= 150°C −50 μA
IEBO emitter-base cut-off
current
VEB=−5 V; IC =0A - - −100 nA
hFE DC current gain VCE=−5 V; IC= −20 mA 30 - -
VCEsat collector-emitter
saturation voltage= −10 mA; IB= −0.5 mA - - −150 mV bias resistor 1 (input) 1.54 2.2 2.86 kΩ collector capacitance VCB= −10 V; IE =ie =0A;
f=1MHz
--3 pF
NXP Semiconductors PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Package outline Packing information[1] For further information and the availability of packing methods, see Section13.
[2] T1: normal taping
[3] T2: reverse taping
Table 9. Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]
PEMB30 SOT666 2 mm pitch, 8 mm tape and reel - - -315 - mm pitch, 8 mm tape and reel - -115 - -
PUMB30 SOT363 4 mm pitch,8 mm tape and reel;T1 [2] -115 - - -135 mm pitch,8 mm tape and reel;T2 [3] -125 - - -165
NXP Semiconductors PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
10. Soldering
