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Partno	Mfg	Dc	Qty	Available	Descript
PEMB19	PHILIPS	N/a	4000	avai	PNP/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open

PEMB19 ,PNP/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = openapplications1.4 Quick reference dataTable 2: Quick reference dataSymbol Parameter Conditions Min Ty ..
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PEMB19
PNP/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open
Product profile1.1 General description
PNP/PNP resistor-equipped transistors.
1.2 Features Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place cost
1.3 Applications Low current peripheral driver Control of IC inputs Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
PEMB19; PUMB19
PNP/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open
Table 1: Product overview
PEMB19 SOT666 - PEMD19 PEMH19
PUMB19 SOT363 SC-88 PUMD19 PUMH19
Table 2: Quick reference data
VCEO collector-emitter voltage open base - - −50 V output current (DC) - - −100 mA bias resistor 1 (input) 15.4 22 28.6 kΩ
Philips Semiconductors PEMB19; PUMB19 Pinning information Ordering information Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3: Pinning GND (emitter) TR1 input (base) TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 output (collector) TR1 001aab555 4 23
006aaa268
Table 4: Ordering information
PEMB19 - plastic surface mounted package; 6 leads SOT666
PUMB19 SC-88 plastic surface mounted package; 6 leads SOT363
Table 5: Marking codes
PEMB19 6D
PUMB19 T3*
Philips Semiconductors PEMB19; PUMB19 Limiting values
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method. Thermal characteristics
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistor
VCBO collector-base voltage open emitter - −50 V
VCEO collector-emitter voltage open base - −50 V
VEBO emitter-base voltage open collector - −5V output current (DC) - −100 mA
ICM peak collector current - −100 mA
Ptot total power dissipation Tamb ≤ 25°C
SOT363 [1]- 200 mW
SOT666 [1][2]- 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Per device
Ptot total power dissipation Tamb ≤ 25°C
SOT363 [1]- 300 mW
SOT666 [1][2]- 300 mW
Table 7: Thermal characteristics
Per transistor
Rth(j-a) thermal resistance from
junction to ambient
Tamb ≤ 25°C
SOT363 [1]- - 625 K/W
SOT666 [1][2]- - 625 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient
Tamb ≤ 25°C
SOT363 [1]- - 416 K/W
SOT666 [1][2]- - 416 K/W
Philips Semiconductors PEMB19; PUMB19 Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Per transistor
ICBO collector-base cut-off
current
VCB = −50 V; IE = 0 A - - −100 nA
ICEO collector-emitter
cut-off current
VCE = −30 V; IB = 0 A - - −1 μA
VCE = −30 V; IB = 0 A;= 150°C −50 μA
IEBO emitter-base cut-off
current
VEB = −5 V; IC = 0 A - - −100 nA
hFE DC current gain VCE = −5 V; IC = −1 mA 100 - -
VCEsat collector-emitter
saturation voltage
IC = −10 mA; IB = −0.5 mA - - −150 mV bias resistor 1 (input) 15.4 22 28.6 kΩ collector capacitance VCB = −10 V; IE = ie = 0 A;
f=1MHz
--3 pF
Philips Semiconductors PEMB19; PUMB19 Package outline
Plastic surface mounted package; 6 leads SOT363
Philips Semiconductors PEMB19; PUMB19
Plastic surface mounted package; 6 leads SOT666

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