PEMB18 ,PEMB18; PUMB18; PNP/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 10 kOhmapplications1.4 Quick reference dataTable 2: Quick reference dataSymbol Parameter Conditions Min Ty ..
PEMB19 ,PNP/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = openapplications1.4 Quick reference dataTable 2: Quick reference dataSymbol Parameter Conditions Min Ty ..
PEMB3 ,PNP resistor-equipped double transistor R1 = 4.7 kOhm, R2 = openLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PEMB30 ,PNP/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = openApplicationsn Low current peripheral driver n Cost-saving alternative for BC857BSand BC857BVn Contr ..
PEMB4 ,PNP resistor-equipped double transistor R1 = 10 kOhm, R2 = openLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PEMB9 ,PNP/PNP resistor-equipped transistors; R1 = 10 k惟, R2 = 47 k惟DISCRETE SEMICONDUCTORSDATA SHEETPEMB9; PUMB9PNP/PNP resistor-equippedtransistors; R1 = 10 kΩ,R2=47 ..
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PEMB18
PEMB18; PUMB18; PNP/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 10 kOhm
Product profile1.1 General descriptionPNP/PNP resistor-equipped transistors.
1.2 Features Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place cost
1.3 Applications Low current peripheral driver Control of IC inputs Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
PEMB18; PUMB18
PNP/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩ
Table 1: Product overviewPEMB18 SOT666 - PEMD18 PEMH18
PUMB18 SOT363 SC-88 PUMD18 PUMH18
Table 2: Quick reference dataVCEO collector-emitter voltage open base - - −50 V output current (DC) - - −100 mA bias resistor 1 (input) 3.3 4.7 6.1 kΩ
R2/R1 bias resistor ratio 1.7 2.1 2.6
Philips Semiconductors PEMB18; PUMB18 Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3: Pinning GND (emitter) TR1 input (base) TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 output (collector) TR1 001aab555
006aaa212 13
Table 4: Ordering informationPEMB18 - plastic surface mounted package; 6 leads SOT666
PUMB18 SC-88 plastic surface mounted package; 6 leads SOT363
Table 5: Marking codesPEMB18 6A
PUMB18 B8*
Philips Semiconductors PEMB18; PUMB18 Limiting values[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Thermal characteristics[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVCBO collector-base voltage open emitter - −50 V
VCEO collector-emitter voltage open base - −50 V
VEBO emitter-base voltage open collector - −10 V input voltage
positive - +7 V
negative - −20 V output current (DC) - −100 mA
ICM peak collector current - −100 mA
Ptot total power dissipation Tamb ≤ 25°C
SOT363 [1]- 200 mW
SOT666 [1][2]- 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Per devicePtot total power dissipation Tamb ≤ 25°C
SOT363 [1]- 300 mW
SOT666 [1][2]- 300 mW
Table 7: Thermal characteristics
Per transistorRth(j-a) thermal resistance from
junction to ambient
Tamb ≤ 25°C
SOT363 [1]- - 625 K/W
SOT666 [1][2]- - 625 K/W
Per deviceRth(j-a) thermal resistance from
junction to ambient
Tamb ≤ 25°C
SOT363 [1]- - 416 K/W
SOT666 [1][2]- - 416 K/W
Philips Semiconductors PEMB18; PUMB18 Characteristics
Table 8: CharacteristicsTamb = 25 °C unless otherwise specified.
Per transistorICBO collector-base cut-off
current
VCB = −50 V; IE = 0 A - - −100 nA
ICEO collector-emitter
cut-off current
VCE = −30 V; IB = 0 A - - −1 μA
VCE = −30 V; IB = 0 A;= 150°C −50 μA
IEBO emitter-base cut-off
current
VEB = −5 V; IC = 0 A - - −600 μA
hFE DC current gain VCE = −5 V; IC = −10 mA 50 - -
VCEsat collector-emitter
saturation voltage
IC = −10 mA; IB = −0.5 mA - - −150 mV
VI(off) off-state input voltage VCE = −5 V; IC = −100 μA- −0.9 −0.3 V
VI(on) on-state input voltage VCE = −0.3 V; IC = −20 mA −2.5 −1.5 - V bias resistor 1 (input) 3.3 4.7 6.1 kΩ
R2/R1 bias resistor ratio 1.7 2.1 2.6 collector capacitance VCB = −10 V; IE = ie = 0 A;
f=1MHz
--3 pF
Philips Semiconductors PEMB18; PUMB18
Philips Semiconductors PEMB18; PUMB18 Package outline
Plastic surface mounted package; 6 leads SOT363
