PDTC144VE ,PDTC144V series; NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhmFeatures Built-in bias resistors Reduces component count Simplifies circuit design Reduces pic ..
PDTC144VK ,PDTC144V series; NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhmGeneral descriptionNPN resistor-equipped transistors.Table 1: Product overviewType number Package P ..
PDTC144VK ,PDTC144V series; NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhmFeatures■ Built-in bias resistors ■ Reduces component count■ Simplifies circuit design ■ Reduces pic ..
PDTC144VT ,NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhmGeneral descriptionNPN resistor-equipped transistors. Table 1. Product overviewType number Package ..
PDTC144VU ,NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhmPDTC144V seriesNPN resistor-equipped transistors; R1 = 47 kΩ, R2=10kΩRev. 03 — 15 February 2005 Pro ..
PDTC144WE ,NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm DISCRETE SEMICONDUCTORS DATA SHEETPDTC144W seriesNPN resistor-equipped transistors; R1 = 47 kΩ, R2 ..
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PDTC144VE-PDTC144VT
NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 10 kOhm
Product profile1.1 General descriptionNPN resistor-equipped transistors.
[1] Also available in SOT54A and SOT54 variant packages (see Section2).
1.2 Features
1.3 Applications
1.4 Quick reference data
PDTC144V series
NPN resistor-equipped transistors; R1= 47 kΩ, R2= 10 kΩ
Rev. 04 — 16 November 2009 Product data sheet
Table 1. Product overviewPDTC144VE SOT416 SC-75 PDTA144VE
PDTC144VK SOT346 SC-59A PDTA144VK
PDTC144VM SOT883 SC-101 PDTA144VM
PDTC144VS[1] SOT54 (TO-92) SC-43A PDTA144VS
PDTC144VT SOT23 - PDTA144VT
PDTC144VU SOT323 SC-70 PDTA144VU Built-in bias resistors Reduces component count Simplifies circuit design Reduces pick and place costs General-purpose switching and
amplification Circuit drivers Inverter and interface circuits
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - 50 V output current (DC) - - 100 mA bias resistor 1 (input) 33 47 61 kΩ
R2/R1 bias resistor ratio 0.17 0.21 0.26
NXP Semiconductors PDTC144V series
NPN resistor-equipped transistors; R1=47 kΩ, R2=10 kΩ Pinning information Table 3. Pinning
SOT54 input (base) output (collector) GND (emitter)
SOT54A input (base) output (collector) GND (emitter)
SOT54 variant input (base) output (collector) GND (emitter)
SOT23, SOT323, SOT346, SOT416 input (base) GND (emitter) output (collector)
SOT883 input (base) GND (emitter) output (collector)
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sym007
sym007
NXP Semiconductors PDTC144V series
NPN resistor-equipped transistors; R1=47 kΩ, R2=10 kΩ Ordering information[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section9).
Marking[1] * = -: made in Hong Kong
* =p: made in Hong Kong=t: made in Malaysia=W: made in China
Table 4. Ordering informationPDTC144VE SC-75 plastic surface mounted package; 3 leads SOT416
PDTC144VK SC-59A plastic surface mounted package; 3 leads SOT346
PDTC144VM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
SOT883
PDTC144VS[1] SC-43A plastic single-ended leaded (through hole) package; leads
SOT54
PDTC144VT - plastic surface mounted package; 3 leads SOT23
PDTC144VU SC-70 plastic surface mounted package; 3 leads SOT323
Table 5. Marking codesPDTC144VE 18
PDTC144VK 29
PDTC144VM G6
PDTC144VS TC144V
PDTC144VT *AA
PDTC144VU *18
NXP Semiconductors PDTC144V series
NPN resistor-equipped transistors; R1=47 kΩ, R2=10 kΩ Limiting values[1] Refer to standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 μm copper strip line.
Thermal characteristics[1] Refer to standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
[3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 μm copper strip line.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 15 V input voltage
positive - +40 V
negative - −15 V output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation
SOT416 Tamb≤25°C [1]- 150 mW
SOT346 Tamb≤25°C [1]- 250 mW
SOT883 Tamb≤25°C [2][3]- 250 mW
SOT54 Tamb≤25°C [1]- 500 mW
SOT23 Tamb≤25°C [1]- 250 mW
SOT323 Tamb≤25°C [1]- 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Table 7. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air
SOT416 [1] -- 833 K/W
SOT346 [1] -- 500 K/W
SOT883 [2][3] -- 500 K/W
SOT54 [1] -- 250 K/W
SOT23 [1] -- 500 K/W
SOT323 [1] -- 625 K/W
NXP Semiconductors PDTC144V series
NPN resistor-equipped transistors; R1=47 kΩ, R2=10 kΩ CharacteristicsTable 8. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE =30V; IB =0A - - 1 μA
VCE =30V; IB =0A; = 150°C 50 μA
IEBO emitter-base cut-off
current
VEB =5V; IC =0A - - 150 μA
hFE DC current gain VCE =5V; IC =5 mA 40 - -
VCEsat collector-emitter
saturation voltage =10mA; IB =0.5 mA - - 150 mV
VI(off) off-state input voltage VCE =5V; IC= 100 μA- 3.1 1 V
VI(on) on-state input voltage VCE =300 mV; IC =2mA 6 3.8 - V bias resistor 1 (input) 33 47 61 kΩ
R2/R1 bias resistor ratio 0.17 0.21 0.26 collector capacitance VCB =10V; IE =ie =0A;
f=1MHz 2 pF
NXP Semiconductors PDTC144V series
NPN resistor-equipped transistors; R1=47 kΩ, R2=10 kΩ
