PDTC123YE ,NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm PDTC123Y seriesNPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩRev. 04 — 16 November 200 ..
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PDTC123YE-PDTC123YU
NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm
Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.
[1] Also available in SOT54A and SOT54 variant packages (see Section2).
1.2 Features
1.3 Applications
1.4 Quick reference data
PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 04 — 16 November 2009 Product data sheet
Table 1. Product overviewPDTC123YE SOT416 SC-75 - PDTA123YE
PDTC123YK SOT346 SC-59A TO-236 PDTA123YK
PDTC123YM SOT883 SC-101 - PDTA123YM
PDTC123YS[1] SOT54 SC-43A TO-92 PDTA123YS
PDTC123YT SOT23 - TO-236AB PDTA123YT
PDTC123YU SOT323 SC-70 - PDTA123YU Built-in bias resistors Reduces component count Simplifies circuit design Reduces pick and place costs General-purpose switching and
amplification Circuit drivers Inverter and interface circuits
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - 50 V output current (DC) - - 100 mA bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 3.6 4.5 5.5
NXP Semiconductors PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Pinning information Table 3. Pinning
SOT54 input (base) output (collector) GND (emitter)
SOT54A input (base) output (collector) GND (emitter)
SOT54 variant input (base) output (collector) GND (emitter)
SOT23; SOT323; SOT346; SOT416 input (base) GND (emitter) output (collector)
SOT883 input (base) GND (emitter) output (collector)
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NXP Semiconductors PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Ordering information[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section9).
Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 4. Ordering informationPDTC123YE SC-75 plastic surface mounted package; 3 leads SOT416
PDTC123YK SC-59A plastic surface mounted package; 3 leads SOT346
PDTC123YM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0× 0.6× 0.5 mm
SOT883
PDTC123YS[1] SC-43A plastic single-ended leaded (through hole) package; leads
SOT54
PDTC123YT - plastic surface mounted package; 3 leads SOT23
PDTC123YU SC-70 plastic surface mounted package; 3 leads SOT323
Table 5. Marking codesPDTC123YE 19
PDTC123YK 31
PDTC123YM G7
PDTC123YS TC123Y
PDTC123YT *AL
PDTC123YU *19
NXP Semiconductors PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 5 V input voltage
positive - +12 V
negative - −5V output current (DC) - 100 mA
ICM peak collector current single pulse; ≤ 1ms
-100 mA
Ptot total power dissipation Tamb≤25°C
SOT416 [1] -150 mW
SOT346 [1] -250 mW
SOT883 [2][3] -250 mW
SOT54 [1] -500 mW
SOT23 [1] -250 mW
SOT323 [1] -200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Table 7. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air
SOT416 [1] -- 833 K/W
SOT346 [1] -- 500 K/W
SOT883 [2][3] -- 500 K/W
SOT54 [1] -- 250 K/W
SOT23 [1] -- 500 K/W
SOT323 [1] -- 625 K/W
NXP Semiconductors PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Characteristics Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE =30V; IB =0A - - 1 μA
VCE =30V; IB =0A; =150°C 50 μA
IEBO emitter-base cut-off
current
VEB =5 V; IC=0A - - 700 μA
hFE DC current gain VCE =5V; IC =5mA 35 - -
VCEsat collector-emitter
saturation voltage =10 mA; IB= 0.5 mA - - 150 mV
VI(off) off-state input voltage VCE =5V; IC =100μA - 0.75 0.3 V
VI(on) on-state input voltage VCE= 300 mV; IC=20 mA 2.5 1.15 - V bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 3.6 4.5 5.5 collector capacitance VCB =10V; IE =ie =0A;
f=1MHz 2 pF
NXP Semiconductors PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
