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PDTC123TU
NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open
Product profile1.1 General descriptionNPN Resistor-Equipped T ransistors (RET) family in Surface Mounted Device (SMD)
plastic packages.
[1] Also available in SOT54A and SOT54 variant packages (see Section2).
1.2 Features
1.3 Applications
1.4 Quick reference data
PDTC123T series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
Rev. 01 — 10 March 2006 Product data sheet
Table 1. Product overviewPDTC123TE SOT416 SC-75 - PDTA123TE
PDTC123TK SOT346 SC-59A TO-236 PDTA123TK
PDTC123TM SOT883 SC-101 - PDTA123TM
PDTC123TS[1] SOT54 SC-43A TO-92 PDTA123TS
PDTC123TT SOT23 - TO-236AB PDTA123TT
PDTC123TU SOT323 SC-70 - PDTA123TU Built-in bias resistors n Reduces component count Simplifies circuit design n Reduces pick and place costs 100 mA output current capability Digital applications n Cost-saving alternativefor BC847 series
in digital applications Control of IC inputs n Switching loads
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - 50 V output current - - 100 mA bias resistor 1 (input) 1.54 2.2 2.86 kΩ
Philips Semiconductors PDTC123T series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Pinning information
Table 3. Pinning
SOT54 input (base) output (collector) GND (emitter)
SOT54A input (base) output (collector) GND (emitter)
SOT54 variant input (base) output (collector) GND (emitter)
SOT23; SOT323; SOT346; SOT416 input (base) GND (emitter) output (collector)
SOT883 input (base) GND (emitter) output (collector)
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top view
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Philips Semiconductors PDTC123T series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Ordering information[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section9).
Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 4. Ordering informationPDTC123TE SC-75 plastic surface mounted package; 3 leads SOT416
PDTC123TK SC-59A plastic surface mounted package; 3 leads SOT346
PDTC123TM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0× 0.6× 0.5 mm
SOT883
PDTC123TS[1] SC-43A plastic single-ended leaded (through hole) package; leads
SOT54
PDTC123TT - plastic surface mounted package; 3 leads SOT23
PDTC123TU SC-70 plastic surface mounted package; 3 leads SOT323
Table 5. Marking codesPDTC123TE 2B
PDTC123TK GB
PDTC123TM FB
PDTC123TS TC123T
PDTC123TT ZM*
PDTC123TU *1T
Philips Semiconductors PDTC123T series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 5 V output current - 100 mA
ICM peak collector current single pulse;≤ 1ms 100 mA
Ptot total power dissipation Tamb≤25°C
SOT416 [1]- 150 mW
SOT346 [1]- 250 mW
SOT883 [2][3]- 250 mW
SOT54 [1]- 500 mW
SOT23 [1]- 250 mW
SOT323 [1]- 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Table 7. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air
SOT416 [1]- - 833 K/W
SOT346 [1]- - 500 K/W
SOT883 [2][3]- - 500 K/W
SOT54 [1]- - 250 K/W
SOT23 [1]- - 500 K/W
SOT323 [1]- - 625 K/W
Philips Semiconductors PDTC123T series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Characteristics
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
ICBO collector-base cut-off
current
VCB=50 V; IE=0A - - 100 nA
ICEO collector-emitter cut-off
current
VCE=30 V; IB =0A - - 1 μA
VCE=30 V; IB =0A;= 150°C 50 μA
IEBO emitter-base cut-off
current
VEB =5V; IC=0A - - 100 nA
hFE DC current gain VCE =5V; IC =20mA 30 - -
VCEsat collector-emitter
saturation voltage=10 mA; IB= 0.5 mA - - 150 mV bias resistor 1 (input) 1.54 2.2 2.86 kΩ collector capacitance VCB =10V;IE =ie =0A;=1 MHz - 2.5 pF
Philips Semiconductors PDTC123T series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Package outline
