PDTC123JU ,PDTC123J series; NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhmDISCRETE SEMICONDUCTORSDATA SHEETPDTC123J seriesNPN resistor-equipped transistors;R1 = 2.2 kΩ, R2 = ..
PDTC123JU ,PDTC123J series; NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhmGeneral descriptionNPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (S ..
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PDTC123JT-PDTC123JU
NPN resistor-equipped transistors; R1 = 2.2 k惟, R2 = 47 k惟
1. Product profile
1.1 General descriptionNPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD)
plastic packages.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PDTC123J series
NPN resistor-equipped transistors;
R1 = 2.2 k, R2 = 47 k
Rev. 7 — 21 December 2011 Product data sheet
Table 1. Product overviewPDTC123JE SOT416 SC-75 - PDTA123JE ultra small
PDTC123JM SOT883 SC-101 - PDTA123JM leadless ultra small
PDTC123JT SOT23 - TO-236AB PDTA123JT small
PDTC123JU SOT323 SC-70 - PDTA123JU very small 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design AEC-Q101 qualified Digital application in automotive and
industrial segments Cost-saving alternative for BC847/857
series in digital applications Control of IC inputs Switching loads
Table 2. Quick reference dataVCEO collector-emitter voltage open base - - 50 V output current - - 100 mA bias resistor 1 (input) 1.54 2.20 2.86 k
R2/R1 bias resistor ratio 17 21 26
NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
2. Pinning information
3. Ordering information
4. Marking[1] * = placeholder for manufacturing site code.
Table 3. Pinning
SOT23; SOT323; SOT416
SOT883
Table 4. Ordering informationPDTC123JE SC-75 plastic surface-mounted package; 3 leads SOT416
PDTC123JM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 0.6 0.5 mm
SOT883
PDTC123JT - plastic surface-mounted package; 3 leads SOT23
PDTC123JU SC-70 plastic surface-mounted package; 3 leads SOT323
Table 5. Marking codesPDTC123JE 28
PDTC123JM DW
PDTC123JT *25
PDTC123JU *49
NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
5. Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V input voltage
positive - +12 V
negative - 5V output current - 100 mA
ICM peak collector current single pulse; tp 1ms - 100 mA
Ptot total power dissipation Tamb25C
PDTC123JE (SOT416) [1][2] -150 mW
PDTC123JM (SOT883) [2][3] -250 mW
PDTC123JT (SOT23) [1] -250 mW
PDTC123JU (SOT323) [1] -200 mW junction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
6. Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
Table 7. Thermal characteristicsRth(j-a) thermal resistance from junction
to ambient
in free air
PDTC123JE (SOT416) [1][2] --830 K/W
PDTC123JM (SOT883) [2][3] --500 K/W
PDTC123JT (SOT23) [1] --500 K/W
PDTC123JU (SOT323) [1] --625 K/W
NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 kNXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
7. Characteristics[1] Characteristics of built-in transistor.
Table 8. CharacteristicsTamb =25 C unless otherwise specified.
ICBO collector-base
cut-off current
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE =30V; IB =0A - - 1 A
VCE =30V; IB =0A; = 150C 5 A
IEBO emitter-base
cut-off current
VEB =5V; IC =0A - - 180 A
hFE DC current gain VCE =5V; IC =10 mA 100 - -
VCEsat collector-emitter
saturation voltage =5mA; IB =0.25mA - - 100 mV
VI(off) off-state input
voltage
VCE =5V; IC =100 A- 0.6 0.5 V
VI(on) on-state input
voltage
VCE= 0.3 V; IC =5mA 1.1 0.75 - V bias resistor 1 (input) 1.54 2.20 2.86 k
R2/R1 bias resistor ratio 17 21 26 collector capacitance VCB =10V; IE =ie =0A; 1MHz 2.5 pF transition frequency VCE =5V; IC =10 mA; = 100 MHz
[1]- 230 - MHz
NXP Semiconductors PDTC123J series
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
