PDTC123EK ,PDTC123E series; NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhmFEATURES QUICK REFERENCE DATA• Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT• Simplified c ..
PDTC123ET ,NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhmFEATURES QUICK REFERENCE DATA• Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT• Simplified c ..
PDTC123EU ,PDTC123E series; NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhmDISCRETE SEMICONDUCTORSDATA SHEETPDTC123E seriesNPN resistor-equipped transistors;R1 = 2.2 kΩ, R2 = ..
PDTC123JE ,NPN resistor-equipped transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
PDTC123JEF ,NPN resistor-equipped transistor
PDTC123JEF ,NPN resistor-equipped transistor
PIC16C54C , EPROM/ROM-Based 8-Bit CMOS Microcontroller Series
PIC16C54C , EPROM/ROM-Based 8-Bit CMOS Microcontroller Series
PIC16C56A , EPROM/ROM-Based 8-Bit CMOS Microcontroller Series
PIC16C56A , EPROM/ROM-Based 8-Bit CMOS Microcontroller Series
PIC16C57C , EPROM/ROM-Based 8-bit CMOS Microcontroller Series
PIC16C622 , EPROM-Based 8-Bit CMOS Microcontrollers
PDTC123EK-PDTC123EU
PDTC123E series; NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTC123E series
FEATURES Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs.
APPLICATIONS General purpose switching and amplification Inverter and interface circuits Circuit driver.
QUICK REFERENCE DATA
DESCRIPTIONNPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
Note*= p: Made in Hong Kong.= t: Made in Malaysia.= W: Made in China.
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTC123E series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTC123E series
ORDERING INFORMATION
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Refer to standard mounting conditions. Reflow soldering is the only recommended soldering method. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTC123E series
THERMAL CHARACTERISTICS
Notes Refer to standard mounting conditions. Reflow soldering is the only recommended soldering method. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICSTamb =25 °C unless otherwise specified.
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTC123E series
PACKAGE OUTLINES
Plastic surface mounted package; 3 leads SOT416
Philips Semiconductors Product specification
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTC123E series
Plastic surface mounted package; 3 leads SOT490
